The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope


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Abstract

It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes.

About the authors

N. D. Prasolov

ITMO University

Author for correspondence.
Email: ndprasolov@itmo.ru
Russian Federation, St. Petersburg, 197101

I. A. Ermakov

ITMO University; Ioffe Institute

Author for correspondence.
Email: ivanermakov9459@gmail.com
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021

A. A. Gutkin

Ioffe Institute

Author for correspondence.
Email: agut@defect.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. A. Solov’ev

Ioffe Institute

Author for correspondence.
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021

L. M. Dorogin

ITMO University

Author for correspondence.
Email: leonid.dorogin@niuitmo.ru
Russian Federation, St. Petersburg, 197101

S. G. Konnikov

Ioffe Institute

Author for correspondence.
Email: konnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

P. N. Brunkov

ITMO University; Ioffe Institute

Author for correspondence.
Email: brunkov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021


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