Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons


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Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.

作者简介

I. Zabavichev

Lobachevsky State University of Nizhny Novgorod

Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Potekhin

Lobachevsky State University of Nizhny Novgorod

Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Puzanov

Lobachevsky State University of Nizhny Novgorod

Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

S. Obolenskiy

Lobachevsky State University of Nizhny Novgorod

编辑信件的主要联系方式.
Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

V. Kozlov

Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures

Email: obolensk@rf.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

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