Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
- Authors: Zabavichev I.Y.1, Potekhin A.A.1, Puzanov A.S.1, Obolenskiy S.V.1, Kozlov V.A.1,2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures
- Issue: Vol 51, No 11 (2017)
- Pages: 1466-1471
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201641
- DOI: https://doi.org/10.1134/S106378261711029X
- ID: 201641
Cite item
Abstract
Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.
About the authors
I. Yu. Zabavichev
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Potekhin
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. S. Puzanov
Lobachevsky State University of Nizhny Novgorod
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolenskiy
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950