Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
- Authors: Sakharov A.V.1, Kurbanova N.Y.2, Demchenko O.I.2, Sim P.E.2, Yagovkina M.A.1, Tsatsulnikov A.F.3, Usov S.O.3, Zakheim D.A.1, Zavarin E.E.1, Lundin W.V.1, Velikovskiy L.E.2
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Affiliations:
- Ioffe Institute
- Tomsk State University
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- Issue: Vol 52, No 14 (2018)
- Pages: 1843-1845
- Section: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205045
- DOI: https://doi.org/10.1134/S1063782618140257
- ID: 205045
Cite item
Abstract
InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures with sheet conductivity values below 210 Ohm/sq. High electron mobility transistors (HEMTs) fabricated from such structures show drain current value exceeding 1.25 A/mm with maximum transconductance of 450 mS/mm. Use of thin in situ Si3N4 capping allows to fabricate and compare HEMT and MIS-HEMTs.
About the authors
A. V. Sakharov
Ioffe Institute
Author for correspondence.
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
N. Y. Kurbanova
Tomsk State University
Email: val.beam@mail.ioffe.ru
Russian Federation, Tomsk
O. I. Demchenko
Tomsk State University
Email: val.beam@mail.ioffe.ru
Russian Federation, Tomsk
P. E. Sim
Tomsk State University
Email: val.beam@mail.ioffe.ru
Russian Federation, Tomsk
M. A. Yagovkina
Ioffe Institute
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
A. F. Tsatsulnikov
Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
S. O. Usov
Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
D. A. Zakheim
Ioffe Institute
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
E. E. Zavarin
Ioffe Institute
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
W. V. Lundin
Ioffe Institute
Email: val.beam@mail.ioffe.ru
Russian Federation, St. Petersburg
L. E. Velikovskiy
Tomsk State University
Email: val.beam@mail.ioffe.ru
Russian Federation, Tomsk