Formation of a Graphene-Like SiN Layer on the Surface Si(111)
- Authors: Mansurov V.G.1, Galitsyn Y.G.1, Malin T.V.1, Teys S.A.1, Fedosenko E.V.1, Kozhukhov A.S.1, Zhuravlev K.S.1,2, Cora I.3, Pécz B.3
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Affiliations:
- Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Thin Film Physics Department, Institute for Technical Physics and Materials Science, Center for Energy Research, Hungarian Academy of Sciences
- Issue: Vol 52, No 12 (2018)
- Pages: 1511-1517
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204639
- DOI: https://doi.org/10.1134/S1063782618120151
- ID: 204639
Cite item
Abstract
00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed during the nitridation of silicon before the formation of a stable amorphous Si3N4 phase. Studying the SiN-(8 × 8) structure by scanning tunneling microscopy shows its complex structure: it consists of an adsorption (8/3 × 8/3) phase, with the lateral period 10.2 Å, and a honeycomb structure with a ~6 Å side of a hexagon that is turned 30° with respect the adsorption phase. The band gap of the SiN-(8 × 8) phase is measured and found to be ~2.8 eV, which is smaller compared to the band gap of the β-Si3N4 crystal phase 5.3 eV. The interplanar spacings in the (AlN3)/(SiN)2 structure on the Si(111) surface are measured. The spacings are 3.3 and 2.86 Å in SiN and AlN, respectively. Such interplanar spacings are indicative of weak van der Waals interaction between the layers. A model of the SiN-(8 × 8) structure as a flat graphene-like layer is suggested. The model is consistent with the diffraction and microscopy data.
About the authors
V. G. Mansurov
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Galitsyn
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
T. V. Malin
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. A. Teys
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
E. V. Fedosenko
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Kozhukhov
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: mansurov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
Ildikó Cora
Thin Film Physics Department, Institute for Technical Physics and Materials Science, Center for Energy Research, Hungarian Academy of Sciences
Email: mansurov@isp.nsc.ru
Hungary, Budapest, H-1525
Béla Pécz
Thin Film Physics Department, Institute for Technical Physics and Materials Science, Center for Energy Research, Hungarian Academy of Sciences
Email: mansurov@isp.nsc.ru
Hungary, Budapest, H-1525