Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation
- Authors: Jahangirli Z.A.1,2, Hashimzade F.M.1, Huseynova D.A.1, Mehdiyev B.G.1, Mustafaev N.B.1
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Affiliations:
- Institute of Physics of the National Academy of Sciences of Azerbaijan
- Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
- Issue: Vol 52, No 7 (2018)
- Pages: 840-842
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203605
- DOI: https://doi.org/10.1134/S1063782618070060
- ID: 203605
Cite item
Abstract
The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.
About the authors
Z. A. Jahangirli
Institute of Physics of the National Academy of Sciences of Azerbaijan; Institute of Radiation Problems of the National Academy of Sciences of Azerbaijan
Author for correspondence.
Email: zakircahangirli@yahoo.com
Azerbaijan, Baku, AZ-1143; Baku, AZ-1143
F. M. Hashimzade
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
Azerbaijan, Baku, AZ-1143
D. A. Huseynova
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
Azerbaijan, Baku, AZ-1143
B. G. Mehdiyev
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
Azerbaijan, Baku, AZ-1143
N. B. Mustafaev
Institute of Physics of the National Academy of Sciences of Azerbaijan
Email: zakircahangirli@yahoo.com
Azerbaijan, Baku, AZ-1143