Enhancement of Photoconductivity by Carrier Screening Effect in  n -GaSb/InAs/ p -GaSb Heterostructure with Single Deep Quantum Well

L. V. Danilov; M. P. Mikhailova; R. V. Levin; G. G. Konovalov; E. V. Ivanov; I. A. Andreev; B. V. Pushnyi; G. G. Zegrya

doi:10.1134/S1063782618040115

Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well

Authors: Danilov L.V.¹, Mikhailova M.P.¹, Levin R.V.¹, Konovalov G.G.¹, Ivanov E.V.¹, Andreev I.A.¹, Pushnyi B.V.¹, Zegrya G.G.¹
Affiliations:
1. Ioffe Institute
Issue: Vol 52, No 4 (2018)
Pages: 493-496
Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
URL: https://journals.rcsi.science/1063-7826/article/view/202848
DOI: https://doi.org/10.1134/S1063782618040115
ID: 202848

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.