Email this article On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
- Authors: Aleshkin V.Y.1,2, Baidus N.V.3, Dubinov A.A.1,2, Krasilnik Z.F.1,2, Nekorkin S.M.1,3, Novikov A.V.1,2, Rykov A.V.3, Yurasov D.V.1,2, Yablonskiy A.N.1
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Physical-Technical Research Institute
- Issue: Vol 51, No 5 (2017)
- Pages: 663-666
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199921
- DOI: https://doi.org/10.1134/S1063782617050037
- ID: 199921
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Abstract
GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm2, respectively.
About the authors
V. Ya. Aleshkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
N. V. Baidus
Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. A. Dubinov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
Z. F. Krasilnik
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. M. Nekorkin
Institute for Physics of Microstructures; Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. V. Novikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. V. Rykov
Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
D. V. Yurasov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. N. Yablonskiy
Institute for Physics of Microstructures
Email: sanya@ipm.sci-nnov.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
