| Issue |
Section |
Title |
File |
| Vol 50, No 1 (2016) |
XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 |
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
|
| Vol 50, No 1 (2016) |
Electronic Properties of Semiconductors |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
|
| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Optical properties of PbS thin films |
|
| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
|
| Vol 50, No 1 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
|
| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide |
|
| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
|
| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
|
| Vol 50, No 1 (2016) |
Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures |
Formation of graphite/sic structures by the thermal decomposition of silicon carbide |
|
| Vol 50, No 2 (2016) |
Electronic Properties of Semiconductors |
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys |
|
| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
|
| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
|
| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Si:Si LEDs with room-temperature dislocation-related luminescence |
|
| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
|
| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
|
| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
|
| Vol 50, No 3 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Photoluminescence and Confinement of Excitons in Disordered Porous Films |
|
| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
|
| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
|
| Vol 50, No 3 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers |
|
| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment |
|
| Vol 50, No 4 (2016) |
Surfaces, Interfaces, and Thin Films |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
|
| Vol 50, No 4 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Gaussian approximation of the spectral dependence of the absorption spectrum in polymer semiconductors |
|
| Vol 50, No 4 (2016) |
Carbon Systems |
Prediction of the stability and electronic properties of carbon nanotori synthesized by a high-voltage pulsed discharge in ethanol vapor |
|
| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
|
| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
|
| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy |
|
| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
| Vol 50, No 5 (2016) |
Spectroscopy, Interaction with Radiation |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate |
|
| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
|
| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
|
| Vol 50, No 5 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
|
| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
|
| Vol 50, No 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
|
| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
| Vol 50, No 6 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen |
|
| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis |
|
| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
|
| Vol 50, No 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of deep levels in GaAs p–i–n structures |
|
| Vol 50, No 7 (2016) |
Physics of Semiconductor Devices |
On current spreading in solar cells: a two-parameter tube model |
|
| Vol 50, No 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Technique for forming ITO films with a controlled refractive index |
|
| Vol 50, No 8 (2016) |
Surfaces, Interfaces, and Thin Films |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime |
|
| Vol 50, No 8 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure |
|
| Vol 50, No 8 (2016) |
Carbon Systems |
Carrier velocity effect on carbon nanotube Schottky contact |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
|
| Vol 50, No 9 (2016) |
Electronic Properties of Semiconductors |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Vol 50, No 9 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes |
|
| Vol 50, No 9 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
|
| Vol 50, No 10 (2016) |
Spectroscopy, Interaction with Radiation |
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities |
|
| Vol 50, No 10 (2016) |
Surfaces, Interfaces, and Thin Films |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
|
| Vol 50, No 10 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the crystal structure and thermoelectric properties of thin Si1–xMnx films |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Dynamic generation of spin-wave currents in hybrid structures |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Magnetospectroscopy of double HgTe/CdHgTe quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Strained multilayer structures with pseudomorphic GeSiSn layers |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polariton condensate coherence in planar microcavities in a magnetic field |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
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| Vol 50, No 13 (2016) |
Materials for Electronic Engineering |
Methods of accounting for inclusion-shape randomness in calculating the effective dielectric characteristics of heterogeneous textured materials |
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| Vol 50, No 13 (2016) |
Methods and Technique of Measurements |
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy |
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| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices |
|
| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
|
| Vol 51, No 1 (2017) |
Surfaces, Interfaces, and Thin Films |
On the growth, structure, and surface morphology of epitaxial CdTe films |
|
| Vol 51, No 1 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
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| Vol 51, No 1 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
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| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
On the thermopower and thermomagnetic properties of ErxSn1–xSe solid solutions |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
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| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
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| Vol 51, No 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
| Vol 51, No 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
|
| Vol 51, No 3 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
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| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Specific features of ZnCdS nanoparticles synthesized in different solvents |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of gamma irradiation on the photoluminescence of porous silicon |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Optimization of vertical cavity lasers with intracavity metal layers |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Silicon nanowire array architecture for heterojunction electronics |
|
| Vol 51, No 5 (2017) |
Electronic Properties of Semiconductors |
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions |
|
| Vol 51, No 5 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the photoconductivity of TlInSe2 |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| Vol 51, No 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Galvanomagnetic properties of Bi85Sb15 thin films on different substrates |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Synthesis and electrical properties of Bi2Te3-based thermoelectric materials doped with Er, Tm, Yb, and Lu |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Fe-based semiconducting Heusler alloys |
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| Vol 51, No 6 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
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| Vol 51, No 6 (2017) |
Physics of Semiconductor Devices |
n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films |
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| Vol 51, No 6 (2017) |
Physics of Semiconductor Devices |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Experimental and theoretical study of the thermoelectric properties of copper selenide |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric power of Bi92Sb8 and Bi85Sb15 thin films |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Prospects of using rare-earth hexaborides in thermoelectric single-photon detectors |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Estimation of the band gap of a series of new thermoelectric materials |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of CexNdyCo4Sb12 skutterudites |
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| Vol 51, No 7 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Purcell effect in disordered one-dimensional photonic crystals |
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| Vol 51, No 7 (2017) |
Physics of Semiconductor Devices |
Varistor effect in highly heterogeneous polymer–ZnO systems |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]m[(Bi, Sb)2(Te, Se)3]n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Specific features of the transport properties of the Lu0.1Bi1.9Te3 compound |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the band structure of Sb2Te3–xSex (0 ≤ x ≤ 0.1): Kinetic and optical data |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
CeB6 thin films produced on different substrates by electron-beam deposition |
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| Vol 51, No 8 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account |
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| Vol 51, No 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
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| Vol 51, No 8 (2017) |
Physics of Semiconductor Devices |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
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| Vol 51, No 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
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| Vol 51, No 8 (2017) |
Erratum |
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” |
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| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
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| Vol 51, No 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
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| Vol 51, No 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
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| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
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| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode |
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| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
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| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
High-voltage MIS-gated GaN transistors |
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| Vol 51, No 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
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| Vol 51, No 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
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| Vol 51, No 10 (2017) |
Review |
Tight-binding simulation of silicon and germanium nanocrystals |
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| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
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| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
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| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field |
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| Vol 51, No 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Thermoelectric effects in nanoscale layers of manganese silicide |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Features of the selective manganese doping of GaAs structures |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
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| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials |
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| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications |
|
| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
A comparative study on the electronic and optical properties of Sb2Se3 thin film |
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| Vol 51, No 12 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
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| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Structure and Properties of Nanostructured YBa2Cu3O7–δ, BiFeO3, and Fe3O4 |
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| Vol 51, No 13 (2017) |
Microelectronic and Nanoelectronic Technology |
Electrical Conductivity of Film Composites Based on Polyvinyledene Fluoride with Carbon Nanotubes |
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| Vol 51, No 13 (2017) |
Microelectronic and Nanoelectronic Technology |
Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems |
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| Vol 52, No 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
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| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
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| Vol 52, No 1 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations |
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| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions |
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| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure |
|
| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide |
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| Vol 52, No 1 (2018) |
Physics of Semiconductor Devices |
Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters |
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| Vol 52, No 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
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| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
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| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
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| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
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| Vol 52, No 2 (2018) |
Spectroscopy, Interaction with Radiation |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
|
| Vol 52, No 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates |
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| Vol 52, No 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
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| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC |
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| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
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| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
THz Stimulated Emission from Simple Superlattice in Positive Differential Conductivity Region |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Experimental Observation of Dyakonov Plasmons in the Mid-Infrared |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Purcell Effect in Tamm Plasmon Structures with QD Emitter |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Partial Electron Localization in a Finite-Size Superlattice Placed in an Electric Field |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Red Single-Photon Emission from InAs/AlGaAs Quantum Dots |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Is the Edge States Energy Spectrum of a 2D Topological Insulator Linear? |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Photon Echo from an Ensemble of (In,Ga)As Quantum Dots |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Quantum Dynamics of a Domain Wall in the Presence of Dephasing |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Photocharging Dynamics in Colloidal CdS Quantum Dots Visualized by Electron Spin Coherence |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Spectroscopy of PbS and PbSe Quantum Dots in Fluorine Phosphate Glasses |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Fabrication of Silicon Nanostructures for Application in Photonics |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Сoncentric GaAs Nanorings Growth Modelling |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold |
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| Vol 52, No 6 (2018) |
Spectroscopy, Interaction with Radiation |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
|
| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
|
| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
|
| Vol 52, No 6 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure |
|
| Vol 52, No 6 (2018) |
Physics of Semiconductor Devices |
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
|
| Vol 52, No 7 (2018) |
Spectroscopy, Interaction with Radiation |
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
|
| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
|
| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
|
| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation |
|
| Vol 52, No 7 (2018) |
Carbon Systems |
Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering |
|
| Vol 52, No 7 (2018) |
Physics of Semiconductor Devices |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
| Vol 52, No 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
|
| Vol 52, No 8 (2018) |
Electronic Properties of Semiconductors |
Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals |
|
| Vol 52, No 8 (2018) |
Surfaces, Interfaces, and Thin Films |
On Recombination Processes in CdS–PbS Films |
|
| Vol 52, No 8 (2018) |
Surfaces, Interfaces, and Thin Films |
Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence of ZnS:Cu in a Polymethyl Methacrylate Matrix |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
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| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
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| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
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| Vol 52, No 8 (2018) |
Physics of Semiconductor Devices |
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
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| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization) |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si |
|
| Vol 52, No 9 (2018) |
Physics of Semiconductor Devices |
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |
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| Vol 52, No 10 (2018) |
Electronic Properties of Semiconductors |
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions |
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| Vol 52, No 10 (2018) |
Spectroscopy, Interaction with Radiation |
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering |
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| Vol 52, No 10 (2018) |
Spectroscopy, Interaction with Radiation |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
|
| Vol 52, No 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
| Vol 52, No 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| Vol 52, No 10 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
|
| Vol 52, No 12 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
| Vol 52, No 12 (2018) |
Carbon Systems |
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface |
|
| Vol 52, No 12 (2018) |
Physics of Semiconductor Devices |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
|
| Vol 52, No 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
| Vol 52, No 13 (2018) |
Electronic Properties of Semiconductors |
Conduction-Electron Spin Resonance in HgSe Crystals |
|
| Vol 52, No 13 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
| Vol 52, No 13 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
Terahertz Optoelectronics of Quantum Rings and Nanohelices |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
The Oscillations in ESR Spectra of Mn0.11Hg0.89Te in X- and Q-Bands |
|
| Vol 52, No 14 (2018) |
Microcavity and Photonic Crystals |
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Electromechanical Switch Based on InxGa1 –xAs Nanowires |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Transverse Magneto-Optical Kerr Effect in Magnetite Covered by Array of Gold Nanostripes |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Spontaneous Emission Amplification in Silver—Organic Periodic Structures and Tamm Plasmon Structures |
|
| Vol 52, No 14 (2018) |
Spin-Related Phenomena in Nanostructures |
Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices |
|
| Vol 52, No 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |
|
| Vol 52, No 15 (2018) |
Electronics Materials |
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers |
|
| Vol 52, No 15 (2018) |
Elements of Integral Electronics |
A Physical Model of an SOI Field-Effect Hall Sensor |
|
| Vol 52, No 15 (2018) |
Erratum |
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 52, No 16 (2018) |
Physics of Semiconductor Devices |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3 |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
|
| Vol 53, No 1 (2019) |
Electronic Properties of Semiconductors |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators |
|
| Vol 53, No 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
| Vol 53, No 1 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
|
| Vol 53, No 1 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
|
| Vol 53, No 2 (2019) |
Review |
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Laser Annealing of Thin ITO Films on Flexible Organic Substrates |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
| Vol 53, No 2 (2019) |
Physics of Semiconductor Devices |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
| Vol 53, No 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
| Vol 53, No 3 (2019) |
Electronic Properties of Semiconductors |
Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals |
|
| Vol 53, No 3 (2019) |
Electronic Properties of Semiconductors |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
|
| Vol 53, No 3 (2019) |
Surfaces, Interfaces, and Thin Films |
Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition |
|
| Vol 53, No 3 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optical Properties of CdS Nanocrystals Doped with Zinc and Copper |
|
| Vol 53, No 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Simulated Contrast of Two Dislocations |
|
| Vol 53, No 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Formation of Porous Silicon by Nanopowder Sintering |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Miniature Thermoelectric Modules Developed for Cycling Applications |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
On the Band Structure of Bi2Te3 |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Materials Based on Solid Solutions of Bismuth and Antimony Tellurides Formed by Rapid Melt Crystallization Methods |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Bi2 –xLuxTe2.7Se0.3 Solid Solutions |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Materials Based on Solid Solutions of Bismuth Chalcogenides of n-Type Conductivity Prepared by Melt Crystallization in a Liquid |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Structure and Thermoelectric Properties of CoSi-Based Film Composites |
|
| Vol 53, No 6 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |
|
| Vol 53, No 6 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr3 Nanocrystals |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
|
| Vol 53, No 6 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films |
|
| Vol 53, No 7 (2019) |
Electronic Properties of Semiconductors |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
|
| Vol 53, No 7 (2019) |
Electronic Properties of Semiconductors |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
|
| Vol 53, No 7 (2019) |
Surfaces, Interfaces, and Thin Films |
On the Properties of Isoparametric AlInGaAsP/InP Heterostructures |
|
| Vol 53, No 7 (2019) |
Surfaces, Interfaces, and Thin Films |
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure |
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| Vol 53, No 7 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation |
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| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Properties of Semipolar GaN Grown on a Si(100) Substrate |
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| Vol 53, No 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
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| Vol 53, No 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
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| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots |
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| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures |
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| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures |
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| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
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| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
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| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
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| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing) |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
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| Vol 53, No 10 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles |
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| Vol 53, No 10 (2019) |
Physics of Semiconductor Devices |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
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| Vol 53, No 10 (2019) |
Physics of Semiconductor Devices |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
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| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films |
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| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
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| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
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| Vol 53, No 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality |
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| Vol 53, No 11 (2019) |
Physics of Semiconductor Devices |
High-Voltage AlInGaN LED Chips |
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| Vol 53, No 11 (2019) |
Physics of Semiconductor Devices |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
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| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
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| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
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| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |
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| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors |
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| Vol 53, No 12 (2019) |
Carbon Systems |
Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement |
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| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
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| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
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| Vol 53, No 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
InxAl1 –xN Solid Solutions: Composition Stability Issues |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Magnetoresistance of Polycrystalline Ytterbium at Low Temperatures |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Spontaneous Emission in the Anti-Waveguiding VCSEL |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Magnetoimpedance Effect in a SOI-Based Structure |
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| Vol 53, No 15 (2019) |
Basic Research |
Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures |
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| Vol 53, No 15 (2019) |
Electronics Materials |
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature |
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| Vol 53, No 15 (2019) |
Elements of Integrated Electronics |
Field-Emission Cathodes Based on Microchannel Plates |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Observation of Intralayer and Interlayer Excitons in Monolayered WSe2/WS2 Heterostructure |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Electronic and Optical Properties of Perovskite Quantum-Dot Dimer |
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