| Issue |
Section |
Title |
File |
| Vol 45, No 1 (2016) |
Article |
Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate |
|
| Vol 45, No 1 (2016) |
Article |
Multilayer graphene-based flash memory |
|
| Vol 45, No 1 (2016) |
Article |
Simulation of the spectroscopic response and electron dynamics in a double quantum dot |
|
| Vol 45, No 1 (2016) |
Article |
Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices |
|
| Vol 45, No 1 (2016) |
Article |
Characteristics of chloride memristors based on nanothick metal films |
|
| Vol 45, No 1 (2016) |
Article |
System-on-chip: Specifics of radiation behavior and estimation of radiation hardness |
|
| Vol 45, No 1 (2016) |
Article |
Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors |
|
| Vol 45, No 1 (2016) |
Article |
Influence of ionizing radiation on the parameters of an operational amplifier based on complementary bipolar transistors |
|
| Vol 45, No 1 (2016) |
Article |
The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS |
|
| Vol 45, No 2 (2016) |
Article |
Nanoelectromechanical diamond structures in quantum informatics. Part I |
|
| Vol 45, No 2 (2016) |
Article |
Kinetics of growth and plasma destruction of polymer films deposited in a glow discharge in methane |
|
| Vol 45, No 2 (2016) |
Article |
Use of thin film of a Co15Ti40N35 alloy for CVD catalytic growth of carbon nanotubes |
|
| Vol 45, No 2 (2016) |
Article |
The detection limit of curved InGaAs/AlGaAs/GaAs hall bars |
|
| Vol 45, No 2 (2016) |
Article |
Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si |
|
| Vol 45, No 2 (2016) |
Article |
The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire |
|
| Vol 45, No 2 (2016) |
Article |
Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands |
|
| Vol 45, No 2 (2016) |
Article |
A universal digital platform for the construction of self-organizing wireless sensor networks for industrial safety and ecological monitoring systems |
|
| Vol 45, No 2 (2016) |
Article |
The architecture of a branching prediction module based on a memristor and spintronic units with ultra-low power consumption |
|
| Vol 45, No 3 (2016) |
Article |
Nanoelectromechanical diamond structures in quantum informatics. Part II |
|
| Vol 45, No 3 (2016) |
Article |
Modeling of the high aspect groove etching in Si in a Cl2/Ar mixture plasma |
|
| Vol 45, No 3 (2016) |
Article |
Mathematical model of thin-film electrode polarization |
|
| Vol 45, No 3 (2016) |
Article |
Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration |
|
| Vol 45, No 3 (2016) |
Article |
Formation of silver and zinc selenide relief patterns by the lift-off photolithography method |
|
| Vol 45, No 3 (2016) |
Article |
A nonlinear microwave model of a low-barrier diode based on semiconductor junctions |
|
| Vol 45, No 3 (2016) |
Article |
Detection of terahertz radiation by resonant tunneling nanoheterostructures |
|
| Vol 45, No 3 (2016) |
Article |
Non-stationary phase transitions in systems metallization of silicon structures |
|
| Vol 45, No 3 (2016) |
Article |
Analysis of the technological characteristics in fabricating SOI MEMS transducers |
|
| Vol 45, No 4 (2016) |
Article |
Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology |
|
| Vol 45, No 4 (2016) |
Article |
Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors |
|
| Vol 45, No 4 (2016) |
Article |
Secondary ion mass spectrometry study of the formation of a nanometer oxide film on a titanium nitride surface |
|
| Vol 45, No 4 (2016) |
Article |
Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma |
|
| Vol 45, No 4 (2016) |
Article |
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition |
|
| Vol 45, No 4 (2016) |
Article |
Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate |
|
| Vol 45, No 4 (2016) |
Article |
Kinetics of neutral particles in HCl and HBr plasmas at low pressures and high electron concentrations |
|
| Vol 45, No 4 (2016) |
Article |
Thin film negative electrode based on silicon composite for lithium-ion batteries |
|
| Vol 45, No 4 (2016) |
Article |
A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles |
|
| Vol 45, No 5 (2016) |
Article |
Experimental diamond photonics: Current state and prospects. Part I |
|
| Vol 45, No 5 (2016) |
Article |
Schmidt decomposition and analysis of statistical correlations |
|
| Vol 45, No 5 (2016) |
Article |
Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals |
|
| Vol 45, No 5 (2016) |
Article |
Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching |
|
| Vol 45, No 5 (2016) |
Article |
Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators |
|
| Vol 45, No 5 (2016) |
Article |
Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide |
|
| Vol 45, No 5 (2016) |
Article |
Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2 |
|
| Vol 45, No 5 (2016) |
Article |
Effect of the reflection coefficients on the conductivity of a thin metal layer in the case of an inhomogeneous time-periodic electric field |
|
| Vol 45, No 6 (2016) |
Article |
Experimental diamond photonics: Current state and prospects. Part II |
|
| Vol 45, No 6 (2016) |
Article |
Integration of functional elements of resistive nonvolative memory with 1T-1R topology |
|
| Vol 45, No 6 (2016) |
Article |
Electrical properties of a TiN/TixAl1 – xOy/TiN memristor device manufactured by magnetron sputtering |
|
| Vol 45, No 6 (2016) |
Article |
Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures |
|
| Vol 45, No 6 (2016) |
Article |
Ways of increasing the service life of positive photoresists |
|
| Vol 45, No 6 (2016) |
Article |
Simulation of mass transfer of liquids through microchannels under the influence of surface acoustic waves |
|
| Vol 45, No 6 (2016) |
Article |
Upset-resilient RAM on STG DICE memory elements with the spaced transistors into two groups |
|
| Vol 45, No 6 (2016) |
Article |
Influence of external conditions on physical processes and plasma parameters in a model of a high-frequency hybrid plasma system |
|
| Vol 45, No 6 (2016) |
Article |
Smart fiber-optical sensor of acoustic pressure with a possibility of distant correction of sensitivity |
|
| Vol 45, No 7 (2016) |
Article |
Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor |
|
| Vol 45, No 7 (2016) |
Article |
Formation of nanosized elements of microwave transistor gates by ion beam lithography |
|
| Vol 45, No 7 (2016) |
Article |
Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography |
|
| Vol 45, No 7 (2016) |
Article |
TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric |
|
| Vol 45, No 7 (2016) |
Article |
Features of the effect of the supply current on the operation mode of an oscillator based on an IMPATT diode taking into account the reflected signal |
|
| Vol 45, No 7 (2016) |
Article |
A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode |
|
| Vol 45, No 7 (2016) |
Article |
320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes |
|
| Vol 45, No 7 (2016) |
Article |
Efficiency of frequency transformation on MOS transistors with a built-in channel under intensively handicapped radioreception |
|
| Vol 45, No 7 (2016) |
Article |
Development and research of MIS varicaps with charge transfer |
|
| Vol 45, No 7 (2016) |
Article |
Intelligent system and electron components for controlling individual heat consumption |
|
| Vol 45, No 7 (2016) |
Article |
Refined model of low-impedance film resistors with a comb-like structure |
|
| Vol 45, No 7 (2016) |
Article |
Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics |
|
| Vol 45, No 7 (2016) |
Article |
Computer-aided design flow of devices for generating and processing signals for satellite navigation systems |
|
| Vol 45, No 7 (2016) |
Article |
Design of a multielement infrared thermal detector |
|
| Vol 45, No 7 (2016) |
Article |
Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz |
|
| Vol 45, No 7 (2016) |
Article |
Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems |
|
| Vol 45, No 7 (2016) |
Article |
Development of magnetic semiconductor microsystems technology |
|
| Vol 45, No 7 (2016) |
Article |
Implementation of fast high-order digital filters based on new-generation FPGAs |
|
| Vol 45, No 8-9 (2016) |
Article |
Prospects of the polysilicon market |
|
| Vol 45, No 8-9 (2016) |
Article |
Formation of three-dimensional structures in the silicon carbide substrates by plasma-chemical etching |
|
| Vol 45, No 8-9 (2016) |
Article |
The nature of thermoacceptors in electron-irradiated high-resistance silicon |
|
| Vol 45, No 8-9 (2016) |
Article |
Directed crystallization of multicrystalline silicon under weak melt convection and gas exchange |
|
| Vol 45, No 8-9 (2016) |
Article |
The development of a purification technique of metallurgical silicon to silicon of the solar brand |
|
| Vol 45, No 8-9 (2016) |
Article |
Investigation of ion-electron emission in the process of reactive ion-beam etching of dielectric thin film heterostructures |
|
| Vol 45, No 8-9 (2016) |
Article |
Formation of a bidomain structure in lithium niobate wafers for beta-voltaic alternators |
|
| Vol 45, No 8-9 (2016) |
Article |
A study of magnetic and electronic hyperfine interactions in epitaxial film of yttrium-iron garnet by the method of conversion electron Mössbauer spectroscopy |
|
| Vol 45, No 8-9 (2016) |
Article |
The effect of the base composition and microstructure of nickel-zinc ferrites on the level of absorption of electromagnetic radiation |
|
| Vol 45, No 8-9 (2016) |
Article |
Theoretical investigation of the electronic and structural properties of AlN thin films |
|
| Vol 45, No 8-9 (2016) |
Article |
High efficiency photoelectrodes based on porous silicon |
|
| Vol 45, No 8-9 (2016) |
Article |
Photosensitive heterostructures based on porous nanocrystalline silicon |
|
| Vol 45, No 8-9 (2016) |
Article |
Surface dipole ordering in submicron polydiphenylenephthalide films |
|
| Vol 45, No 8-9 (2016) |
Article |
Influence of the yttria dopant on the structure and properties of (ZrO2)0.91–x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) crystals |
|
| Vol 46, No 1 (2017) |
Article |
Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring |
|
| Vol 46, No 1 (2017) |
Article |
Comparative analysis of CMOS circuits of a thermometer-to-binary encoder for integrated flash analog-to-digital converters |
|
| Vol 46, No 1 (2017) |
Article |
Alloying carbon nanotubes |
|
| Vol 46, No 1 (2017) |
Article |
Modelling of emission processes in carbon nanotubes |
|
| Vol 46, No 1 (2017) |
Article |
Direct conversion of β-decay energy into electrical energy |
|
| Vol 46, No 1 (2017) |
Article |
Investigation of textured aluminum nitride films prepared by chemical vapor deposition |
|
| Vol 46, No 1 (2017) |
Article |
Two-view tomography of low-temperature plasma |
|
| Vol 46, No 1 (2017) |
Article |
Measuring the sizes of microcircuit elements of widths less than 100 nm by the method of SEM probe defocusing |
|
| Vol 46, No 1 (2017) |
Article |
Development of design flow for multiported register files, which includes a cell library and a compiler for SOI 0.25-μm process |
|
| Vol 46, No 2 (2017) |
Article |
CVD-growth of CNT with the use of catalutic Ct–Me–N–O thin films incorporated in the technology |
|
| Vol 46, No 2 (2017) |
Article |
Optimization of the synthesis of carbon nanotubes to improve the efficiency of chemical posttreatments of the prepared material |
|
| Vol 46, No 2 (2017) |
Article |
Formation and study of thin-film lithium-ion batteries using CNT/silicon composite material as an anode |
|
| Vol 46, No 2 (2017) |
Article |
Magnetization of permalloy films |
|
| Vol 46, No 2 (2017) |
Article |
Gas-phase etching of SiO2 layers in an HF/C2H5OH mixture |
|
| Vol 46, No 2 (2017) |
Article |
Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps |
|
| Vol 46, No 2 (2017) |
Article |
Element base of quantum informatics II: Quantum communications with single photons |
|
| Vol 46, No 2 (2017) |
Article |
Modeling thermoelectric generators using the ANSYS software platform: Methodology, practical applications, and prospects |
|
| Vol 46, No 2 (2017) |
Article |
Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor |
|
| Vol 46, No 3 (2017) |
Article |
Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors |
|
| Vol 46, No 3 (2017) |
Article |
Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model |
|
| Vol 46, No 3 (2017) |
Article |
Simulation of impact of the HCP on the CNT-nanosensor by the molecular dynamics method |
|
| Vol 46, No 3 (2017) |
Article |
Specifics of electromagnetic radiation effects on integrated circuits |
|
| Vol 46, No 3 (2017) |
Article |
Functional testing of digital signal processors in radiation experiments |
|
| Vol 46, No 3 (2017) |
Article |
Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films |
|
| Vol 46, No 3 (2017) |
Article |
Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model |
|
| Vol 46, No 3 (2017) |
Article |
Graphene flexible touchscreen with integrated analog-digital converter |
|
| Vol 46, No 3 (2017) |
Article |
Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage |
|
| Vol 46, No 3 (2017) |
Article |
Power switching transistors based on gallium nitride epitaxial heterostructures |
|
| Vol 46, No 3 (2017) |
Article |
Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma |
|
| Vol 46, No 3 (2017) |
Article |
Circuit model for functionally integrated injection laser modulators |
|
| Vol 46, No 4 (2017) |
Article |
Integrated optical-controlled diamond sensors |
|
| Vol 46, No 4 (2017) |
Article |
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming |
|
| Vol 46, No 4 (2017) |
Article |
Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface |
|
| Vol 46, No 4 (2017) |
Article |
Copper etching kinetics in a high-frequency discharge of freon R12 |
|
| Vol 46, No 4 (2017) |
Article |
Effect of the mixture composition on the electrophysical parameters and emission spectra of CF2Cl2/Ar and CF2Cl2/He plasma |
|
| Vol 46, No 4 (2017) |
Article |
Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures |
|
| Vol 46, No 4 (2017) |
Article |
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films |
|
| Vol 46, No 4 (2017) |
Article |
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles |
|
| Vol 46, No 4 (2017) |
Article |
Method of radiational identification of a plant and characterization of integrated circuit technology |
|
| Vol 46, No 4 (2017) |
Erratum |
Erratum to: “Thin film negative electrode based on silicon composite for lithium-ion batteries” |
|
| Vol 46, No 4 (2017) |
Erratum |
Erratum to: “Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators” |
|
| Vol 46, No 4 (2017) |
Erratum |
Erratum to: “Influence of external conditions on physical processes and plasma parameters in a model of a high-frequency hybrid plasma system” |
|
| Vol 46, No 5 (2017) |
Article |
Simulating the chlorine plasma etching profile of high-aspect-ratio trenches in Si |
|
| Vol 46, No 5 (2017) |
Article |
Peculiarities of the energy landscape of a rectangular magnetic nanoisland |
|
| Vol 46, No 5 (2017) |
Article |
Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures |
|
| Vol 46, No 5 (2017) |
Article |
Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits |
|
| Vol 46, No 5 (2017) |
Article |
Silicide iridium sensors based on solid sensitive elements |
|
| Vol 46, No 5 (2017) |
Article |
Organizing the memory array of multiport register files to reduce power consumption |
|
| Vol 46, No 5 (2017) |
Article |
Low-noise amplifier for the range of 57–64 GHz with grounding holes through photolake layer |
|
| Vol 46, No 5 (2017) |
Article |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology |
|
| Vol 46, No 5 (2017) |
Article |
Modeling SiO2 leakage currents caused by electrical overloads |
|
| Vol 46, No 5 (2017) |
Article |
Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors |
|
| Vol 46, No 6 (2017) |
Article |
Statistical Models and Adequacy Validation for Optical Quantum State Tomography with Quadrature Measurements |
|
| Vol 46, No 6 (2017) |
Article |
Single-Photon Response and Spectroscopy of a Photonic Molecule Based on Diamond Microrings |
|
| Vol 46, No 6 (2017) |
Article |
Electromagnetic Modeling, Technology, and Production of Microwave C3MOSHFET Switches on AlGaN/GaN Heterostructures |
|
| Vol 46, No 6 (2017) |
Article |
The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone |
|
| Vol 46, No 6 (2017) |
Article |
Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure |
|
| Vol 46, No 6 (2017) |
Article |
Total Efficiency of the Optical-to-Terahertz Conversion in Photoconductive Antennas Based on LT-GaAs and In0.38Ga0.62As |
|
| Vol 46, No 6 (2017) |
Article |
Electronic Structure of Molecular Switches on Splitters Based on trans-Polyacetylene |
|
| Vol 46, No 6 (2017) |
Article |
Development of the Technology of Magnetron Sputtering Deposition of LiPON Films and Investigation of Their Characteristics |
|
| Vol 46, No 6 (2017) |
Article |
Effect of the Measuring Signal Parameters on the Error in Capacitance Measurements of a p-n Transition and Determining Its Resistance to Radiation |
|
| Vol 46, No 7 (2017) |
Article |
On New Types of Stoneley Waves and the Possibility of Using Them in Integrated Acoustoelectronics |
|
| Vol 46, No 7 (2017) |
Article |
Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells |
|
| Vol 46, No 7 (2017) |
Article |
Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips |
|
| Vol 46, No 7 (2017) |
Article |
X-ray Diffractometry Studies of the Structural Properties of Solid Solutions Based on Gallium Nitride |
|
| Vol 46, No 7 (2017) |
Article |
Influence of Superexchange Interaction on the Ferromagnetic Properties of Manganites and Cobaltites |
|
| Vol 46, No 7 (2017) |
Article |
Study of Ion Beam Including Deposition Modes of Platinum Nanosized Structures Using by Focused Ion Beams |
|
| Vol 46, No 7 (2017) |
Article |
Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences |
|
| Vol 46, No 7 (2017) |
Article |
Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors |
|
| Vol 46, No 7 (2017) |
Article |
Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices |
|
| Vol 46, No 7 (2017) |
Article |
Stability of Nitride Microwave Monolytic ICs of a Signal Converter Irradiated by Neutrons and Gamma Radiation |
|
| Vol 46, No 7 (2017) |
Article |
Design Features of Parameterized Analog Cells Based on Matched SOI Matrix Elements |
|
| Vol 46, No 7 (2017) |
Article |
Cellular Automata Algorithms for String Sorting and Integer Multiplication According to the Atrubin Scheme |
|
| Vol 46, No 7 (2017) |
Article |
Capacitance Sensors Based on Nanotube Supercondensers |
|
| Vol 46, No 7 (2017) |
Article |
Methods to Accelerate Transient Processes in Frequency Synthesizers |
|
| Vol 46, No 7 (2017) |
Article |
Use of Silicon-Germanium Technology for the Development of Active Microwave Units of Active Electronically Scanned Arrays |
|
| Vol 46, No 7 (2017) |
Article |
Application of Two-Wavelength X-Ray Optical Scheme for Combined Measurements of X-Ray Specular Reflection and Diffuse Scattering to Study Multilayered Thin Film Structures |
|
| Vol 46, No 8 (2017) |
Article |
Application of Radioactive Isotopes for Beta-Voltaic Generators |
|
| Vol 46, No 8 (2017) |
Article |
Influence of Extrusion Temperature on the Formation of a Bi0.5Sb1.5Te3 Structure of p-Type Conductivity |
|
| Vol 46, No 8 (2017) |
Article |
Obtaining Material Based on Copper Selenide by the Methods of Powder Metallurgy |
|
| Vol 46, No 8 (2017) |
Article |
Deep Tellurium Purification for the Production of Electronic and Photonic Materials |
|
| Vol 46, No 8 (2017) |
Article |
Deformation Anisotropy of Y + 128°-Cut Single Crystalline Bidomain Wafers of Lithium Niobate |
|
| Vol 46, No 8 (2017) |
Article |
The Standard Model of the Heterostructure for Microwave Devices |
|
| Vol 46, No 8 (2017) |
Article |
Evolution of Models and Algorithms for Calculating the Parameters of Technological Processes to Obtain Materials for Micro- and Nanoelectronics |
|
| Vol 46, No 8 (2017) |
Article |
Modeling the Sensing Activity of Carbon Nanotubes Functionalized with the Carboxyl, Amino, or Nitro Group Toward Alkali Metals |
|
| Vol 46, No 8 (2017) |
Article |
On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon |
|
| Vol 46, No 8 (2017) |
Article |
The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them |
|
| Vol 46, No 8 (2017) |
Article |
Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas |
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| Vol 46, No 8 (2017) |
Article |
Crystallochemical Features of the Simplest and Mixed-Layered Bismuth Oxides |
|
| Vol 46, No 8 (2017) |
Article |
Is It not Time to Go back to Tamman’s Tg? |
|
| Vol 47, No 1 (2018) |
Article |
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm |
|
| Vol 47, No 1 (2018) |
Article |
Simulating the Effects of Internal Mechanical Stresses on the Decomposition Kinetics of a Supersaturated Oxygen Solution in Silicon |
|
| Vol 47, No 1 (2018) |
Article |
Simulation of Single Event Effects in STG DICE Memory Cells |
|
| Vol 47, No 1 (2018) |
Article |
Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge |
|
| Vol 47, No 1 (2018) |
Article |
Studying the Thermodynamic Characteristics of Anodic Alumina |
|
| Vol 47, No 1 (2018) |
Article |
Basic Techniques of Increasing Resolution of Photopolymerizable Compositions |
|
| Vol 47, No 1 (2018) |
Article |
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption |
|
| Vol 47, No 2 (2018) |
Article |
Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum Dot |
|
| Vol 47, No 2 (2018) |
Article |
Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma |
|
| Vol 47, No 2 (2018) |
Article |
Field Emission Properties of Nanostructured Silicon Cathode Arrays |
|
| Vol 47, No 2 (2018) |
Article |
Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal Particles |
|
| Vol 47, No 2 (2018) |
Article |
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia |
|
| Vol 47, No 2 (2018) |
Article |
Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height |
|
| Vol 47, No 2 (2018) |
Article |
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer |
|
| Vol 47, No 2 (2018) |
Article |
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory |
|
| Vol 47, No 3 (2018) |
Article |
Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes |
|
| Vol 47, No 3 (2018) |
Article |
Helium Bubbles Formed in Si(001) Layers after High-Dose Implantation and Thermal Annealing |
|
| Vol 47, No 3 (2018) |
Article |
Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions |
|
| Vol 47, No 3 (2018) |
Article |
Geometric Effects in Current-Voltage Characteristics of a Cross-Shaped MDM Ni/NiO/Fe Structure |
|
| Vol 47, No 3 (2018) |
Article |
Magnetic Force Microscopy of Iron and Nickel Nanowires Fabricated by the Matrix Synthesis Technique |
|
| Vol 47, No 3 (2018) |
Article |
Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
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| Vol 47, No 3 (2018) |
Article |
Calculating the High-Frequency Electrical Conductivity of a Thin Metallic Layer for an Ellipsoidal Fermi Surface |
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| Vol 47, No 3 (2018) |
Article |
Finite Element Simulation of Frequency Response of MEMS-Microphone |
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| Vol 47, No 3 (2018) |
Article |
Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures |
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| Vol 47, No 4 (2018) |
Article |
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films |
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| Vol 47, No 4 (2018) |
Article |
A Thin-Film Platform for Chemical Gas Sensors |
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| Vol 47, No 4 (2018) |
Article |
Structuring Copper in the Plasma Medium of a High-Frequency Discharge |
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| Vol 47, No 4 (2018) |
Article |
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4 + C4F8 + Ar Mixture on the Parameters of Plasma and SiO2/Si Etching Selectivity |
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| Vol 47, No 4 (2018) |
Article |
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2 Plasma |
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| Vol 47, No 4 (2018) |
Article |
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors |
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| Vol 47, No 4 (2018) |
Article |
Quantum Gates with Spin States in Continuous Microwave Field |
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| Vol 47, No 4 (2018) |
Article |
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals |
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| Vol 47, No 5 (2018) |
Article |
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser |
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| Vol 47, No 5 (2018) |
Article |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation |
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| Vol 47, No 5 (2018) |
Article |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel |
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| Vol 47, No 5 (2018) |
Article |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism |
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| Vol 47, No 5 (2018) |
Article |
Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures |
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| Vol 47, No 5 (2018) |
Article |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension |
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| Vol 47, No 5 (2018) |
Article |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics |
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| Vol 47, No 5 (2018) |
Article |
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer |
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| Vol 47, No 5 (2018) |
Article |
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates |
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| Vol 47, No 6 (2018) |
Article |
Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber |
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| Vol 47, No 6 (2018) |
Article |
Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition |
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| Vol 47, No 6 (2018) |
Article |
Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods |
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| Vol 47, No 6 (2018) |
Article |
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers |
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| Vol 47, No 6 (2018) |
Article |
Operational Features of MEMS with an Even Number of Electrodes |
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| Vol 47, No 6 (2018) |
Article |
Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups |
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| Vol 47, No 6 (2018) |
Article |
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma |
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| Vol 47, No 6 (2018) |
Article |
Etching of SiC in Low Power Inductively-Coupled Plasma |
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| Vol 47, No 6 (2018) |
Article |
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture |
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| Vol 47, No 6 (2018) |
Article |
Stacked Gate FinFET with Gate Extension for Improved Gate Control |
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| Vol 47, No 7 (2018) |
Article |
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers |
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| Vol 47, No 7 (2018) |
Article |
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications |
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| Vol 47, No 7 (2018) |
Article |
Structural Strength and Temperature Condition of Multi-Chip Modules |
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| Vol 47, No 7 (2018) |
Article |
An Integrated High-Capacitance Varicap Based on Porous Silicon |
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| Vol 47, No 7 (2018) |
Article |
Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors |
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| Vol 47, No 7 (2018) |
Article |
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors |
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| Vol 47, No 7 (2018) |
Article |
Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices |
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| Vol 47, No 7 (2018) |
Article |
The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors |
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| Vol 47, No 7 (2018) |
Article |
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures |
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| Vol 47, No 7 (2018) |
Article |
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect |
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| Vol 47, No 7 (2018) |
Article |
Design Automation Technique of Silicon Bandgap Voltage Reference |
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| Vol 47, No 7 (2018) |
Article |
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders |
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| Vol 47, No 7 (2018) |
Article |
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors |
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| Vol 47, No 7 (2018) |
Article |
Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip |
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| Vol 47, No 7 (2018) |
Article |
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits |
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| Vol 47, No 7 (2018) |
Article |
Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators |
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| Vol 47, No 7 (2018) |
Article |
Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator |
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| Vol 47, No 8 (2018) |
Article |
Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review |
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| Vol 47, No 8 (2018) |
Article |
Polysilicon Market Development and Production Technologies |
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| Vol 47, No 8 (2018) |
Article |
Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications |
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| Vol 47, No 8 (2018) |
Article |
Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride |
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| Vol 47, No 8 (2018) |
Article |
Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency |
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| Vol 47, No 8 (2018) |
Article |
Optimization Problems of Nanosized Semiconductor Heterostructures |
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| Vol 47, No 8 (2018) |
Article |
Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes |
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| Vol 47, No 8 (2018) |
Article |
Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron |
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| Vol 47, No 8 (2018) |
Article |
Formation of Charge Pumps in the Structure of Photoelectric Converters |
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| Vol 47, No 8 (2018) |
Article |
Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process |
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| Vol 47, No 8 (2018) |
Article |
Modeling the Energy Structure of a GaN p–i–n Junction |
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| Vol 47, No 8 (2018) |
Article |
On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth |
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| Vol 48, No 1 (2019) |
Article |
Atomic Layer Deposition of Y2O3 Using Tris(butylcyclopentadienyl)yttrium and Water |
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| Vol 48, No 1 (2019) |
Article |
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching |
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| Vol 48, No 1 (2019) |
Article |
The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs |
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| Vol 48, No 1 (2019) |
Article |
Identification and Excitation Mechanisms of the Lines and Bands of Boron-Containing Components in the Optical Emission Spectra of Low-Temperature BF3/Ar Plasmas |
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| Vol 48, No 1 (2019) |
Article |
Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers |
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| Vol 48, No 2 (2019) |
Article |
Influence of Pulsed Laser Deposition Modes on Properties of Nanocrystalline LiNbO3 Films |
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| Vol 48, No 2 (2019) |
Article |
Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation |
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| Vol 48, No 2 (2019) |
Article |
Studying the Regimes of Silicon Surface Profiling by Focused Ion Beams |
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| Vol 48, No 2 (2019) |
Article |
Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors |
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| Vol 48, No 2 (2019) |
Article |
Effect of the Fermi Surface Anisotropy on the Electrical Conductivity of a Thin Inhomogeneous Metal Wire |
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| Vol 48, No 2 (2019) |
Article |
Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures |
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| Vol 48, No 2 (2019) |
Article |
Studying the Thermodynamic Properties of Composite Magnetic Material Based on Anodic Alumina |
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| Vol 48, No 2 (2019) |
Article |
Fabrication and Electrical Characteristics of Asymmetric Rings Made of HTS YBCO Films Obtained by Pulsed Laser Deposition |
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| Vol 48, No 2 (2019) |
Article |
Effect of the Built-in Surface Potential on the I–V Characteristics of Silicon MIS Structures |
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| Vol 48, No 3 (2019) |
Article |
Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language |
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| Vol 48, No 3 (2019) |
Article |
Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles |
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| Vol 48, No 3 (2019) |
Article |
Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon |
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| Vol 48, No 3 (2019) |
Article |
Methods and Algorithms for the Logical-Topological Design of Microelectronic Circuits at the Valve and Inter-Valve Levels for Promising Technologies with a Vertical Transistor Gate |
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| Vol 48, No 3 (2019) |
Article |
Layout Synthesis Design Flow for Special-Purpose Reconfigurable Systems-on-a-Chip |
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| Vol 48, No 3 (2019) |
Article |
Extracting a Logic Gate Network from a Transistor-Level CMOS Circuit |
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| Vol 48, No 3 (2019) |
Article |
Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions |
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| Vol 48, No 4 (2019) |
Article |
Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS1 –хSeх Materials |
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| Vol 48, No 4 (2019) |
Article |
Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant Precursors |
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| Vol 48, No 4 (2019) |
Article |
Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method |
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| Vol 48, No 4 (2019) |
Article |
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge |
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| Vol 48, No 4 (2019) |
Article |
The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma |
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| Vol 48, No 4 (2019) |
Article |
Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups |
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| Vol 48, No 4 (2019) |
Article |
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs |
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| Vol 48, No 4 (2019) |
Article |
Memristor Based Pulse Train Generator |
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| Vol 48, No 4 (2019) |
Article |
Microconsuming 8–12 GHz GaN Power Amplifiers |
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| Vol 48, No 4 (2019) |
Article |
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology |
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| Vol 48, No 5 (2019) |
Article |
Study of the Effect of Technetium as a Component of the Catalysts of the REE Compounds on the Process of Decomposition of Monohydrides of Silicon and Germanium |
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| Vol 48, No 5 (2019) |
Article |
Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots |
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| Vol 48, No 5 (2019) |
Article |
Features of the Architecture Implementing the Dataflow Computational Model and Its Application in the Creation of Microelectronic High-Performance Computing Systems |
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| Vol 48, No 5 (2019) |
Article |
Functional Properties and Frequency Characteristics of Low-Sensitive RC Filters Based on Micropower Operational Amplifiers |
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| Vol 48, No 5 (2019) |
Article |
On the Construction of Neuromorphic Fault Dictionaries for Analog Integrated Circuits |
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| Vol 48, No 5 (2019) |
Article |
Formal Description of Digital Control System Operation and Its Use in Designing |
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| Vol 48, No 5 (2019) |
Article |
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications |
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| Vol 48, No 5 (2019) |
Article |
A New Voltage Level Shifter For Low-Power Applications |
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| Vol 48, No 5 (2019) |
Article |
Automation of Pulse Electric Strength Test of Electronic Component Base |
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| Vol 48, No 6 (2019) |
Article |
Creation and Development of the Ion Beam Technology |
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| Vol 48, No 6 (2019) |
Article |
Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture |
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| Vol 48, No 6 (2019) |
Article |
Simulation of the Effect of the Grain Boundary Structure on Effective Ionic Charges in the Processes of Electromigration |
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| Vol 48, No 6 (2019) |
Article |
Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements |
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| Vol 48, No 6 (2019) |
Article |
Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region |
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| Vol 48, No 6 (2019) |
Article |
Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface |
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| Vol 48, No 6 (2019) |
Article |
Estimating the Electric Mode Effect (Active and Passive) on the Dose of Radiation Resistance of Microcircuits |
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| Vol 48, No 6 (2019) |
Article |
Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects |
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| Vol 48, No 6 (2019) |
Article |
Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields |
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| Vol 48, No 6 (2019) |
Article |
A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer |
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| Vol 48, No 7 (2019) |
Article |
Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical Radiation |
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| Vol 48, No 7 (2019) |
Article |
A study of the Composition of Tellurium Vapor by the Static Method |
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| Vol 48, No 7 (2019) |
Article |
Simulating and Ensuring the Reliability of the Elements and Joints of Three-Dimensional Microelectronics Modules |
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| Vol 48, No 7 (2019) |
Article |
Histogram Measurement of ADC Nonlinearities by Using Incomplete-Scale Sine Waves |
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| Vol 48, No 7 (2019) |
Article |
Junctionless MOS-Transistor with a Low Subthreshold Current |
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| Vol 48, No 7 (2019) |
Article |
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV |
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| Vol 48, No 7 (2019) |
Article |
Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide |
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| Vol 48, No 7 (2019) |
Article |
Development of an Area Image Sensor Pixel for an X-Ray Detector |
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| Vol 48, No 7 (2019) |
Article |
Methods of Improving the Accuracy of Simulating Delays and Peak Currents of Combinational CMOS-Circuits at the Logical Design Level |
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| Vol 48, No 7 (2019) |
Article |
Studying the Influence of Temperature on the Operation of a Resonator of a Frequency Micromechanical Accelerometer |
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| Vol 48, No 7 (2019) |
Article |
Automation of the Measurement Process of the Parameters of the Sensitive Elements of the Gas Flow Rate Sensors |
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| Vol 48, No 7 (2019) |
Article |
Finite Element Modeling of the Membrane Module |
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| Vol 48, No 7 (2019) |
Article |
Measurements of the Airflow Velocity Using Ultrasonic Transducers |
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| Vol 48, No 7 (2019) |
Article |
Precision L-Band Analog-Digital Phase Shifter with a 0°–360° Phase Change |
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| Vol 48, No 7 (2019) |
Article |
Radio-Wave Method of Control of the Heterogeneity of the Electrophysical Parameters of Dielectrics Using a Scanning Microstrip Line |
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| Vol 48, No 7 (2019) |
Article |
Absorbing Elements Based on a Uniform Resistive Film for the Implementation of a Wide Range of Radio Signal Power Attenuations |
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| Vol 48, No 8 (2019) |
Article |
Effect of the Phase Composition and Local Crystal Structure on the Transport Properties of the ZrO2–Y2O3 and ZrO2–Gd2O3 Solid Solutions |
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| Vol 48, No 8 (2019) |
Article |
Peculiarities of the Crystal Structure and Texture of Isotropic and Anisotropic Polycrystalline Hexagonal Ferrites BaFe12O19 Synthesized by Radiation-Thermal Sintering |
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| Vol 48, No 8 (2019) |
Article |
Features of the Manifestation of Surface Electrochemical Processes in Ferroelectric Crystals with Low-Temperature Phase Transitions |
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| Vol 48, No 8 (2019) |
Article |
Inverse-Coefficient Problem of Heat Transfer in Layered Nanostructures |
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| Vol 48, No 8 (2019) |
Article |
Calculation of Heat Transfer in Nanosized Heterostructures |
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| Vol 48, No 8 (2019) |
Article |
The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT |
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| Vol 48, No 8 (2019) |
Article |
Prediction of Potential Barrier at Crystallite Boundaries in Poly- and Nanocrystalline Semiconductors |
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| Vol 48, No 8 (2019) |
Article |
The Influence of Substitution with Aluminum on the Field of Effective Magnetic Anisotropy and the Degree of Magnetic Texture of Anisotropic Polycrystalline Hexagonal Ferrites of Barium and Strontium for Substrates of Microstrip Devices of Microwave Electronics |
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| Vol 48, No 8 (2019) |
Article |
Electrical Performance Improvement of Lead-Acid Battery under the Impact of Micro Carbon Additives |
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| Vol 48, No 8 (2019) |
Article |
Evaluation of Intellectual Property Objects in the Nanoindustry Field |
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