Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices

Abstract

High-speed broadband analog integrated circuits based on a complimentary bipolar technology are widely used in modern equipment. The speed of these circuits is directly related to the boundary frequency of the transistors used. In this paper, we consider some modern approaches to develop complimentary bipolar technologies that ensure a high performance of the integrated circuits and systems on a chip. With the help of TCAD software, the device-technological modeling of the electronic component base is carried out. A technological route is developed for manufacturing the operational amplifier by a high-speed complimentary technology with a self-compliant emitter–base node, based on two layers of polysilicon. To ensure the self-alignment of the base and emitter polysilicon layers when manufacturing n–p–n and p–n–p transistors, an L-shaped nitride spacer is formed. The lateral insulation of the components is made in the form of narrow vertical slits that are lined with oxide and silicon nitride and filled with polysilicon. The manufacturing route developed allows the n–p–n and p–n–p transistors on a single crystal to reach the boundary frequency of 8–10 GHz at the collector–emitter breakdown voltages of more than 10 V. The problem of the complementarity of bipolar transistors is largely solved. In the future, this will make it possible to create a new class of domestic broadband and high-speed analog and digital integrated circuits, as well as ensure the technological independence of the Russian Federation.