Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes

Abstract

This article studied the resistance of the negative electron resist based on hydrogen-silsesquioxane (HSQ) depending on the dose of exposure in the process of Reactive Ion Etching (RIE). These studies showed the strong dependence of resistance on irradiation dose (in case of full development of the e-beam resist) even after annealing the resist 30 minutes 400°C in air. Selectivity up to 14 was obtained in the process of reactive ion etching of silicon in a mixture of gases SF₆: C₄F₈. These results can be used to manufacturing of silicon nanoscale structures. It was shown that the resistance to wet etching in a 5% solution of hydrofluoric acid (HF) is also determined by irradiation dose. Additionally, taking into account the obtained results, silicon nanowires of width 10 nm with an aspect ratio of 1: 10 was manufactured.