Email this article Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions
- Authors: Chumakov A.I.1
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Affiliations:
- National Research Nuclear University MEPhI
- Issue: Vol 47, No 3 (2018)
- Pages: 175-180
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186821
- DOI: https://doi.org/10.1134/S1063739718030058
- ID: 186821
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Abstract
The experimental-calculated methodology for evaluating the LSI sensitivity to the impact of single charged particles based on using laser radiation is proposed. The sensitivity of VLSI is determined by the results of scanning with the laser radiation of picosecond duration of the entire chip surface. The optical loss at the same points are evaluated by the measurement results of the ionization current under exposure to steady-state laser radiation.
About the authors
A. I. Chumakov
National Research Nuclear University MEPhI
Author for correspondence.
Email: Aichum@spels.ru
Russian Federation, Moscow, 115409
