Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology
- Authors: Aliabev A.J.1, Korotkov A.S.1
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 45, No 4 (2016)
- Pages: 229-236
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185666
- DOI: https://doi.org/10.1134/S1063739716040028
- ID: 185666
Cite item
Abstract
The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given.
About the authors
A. J. Aliabev
Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: alyabjev_au@mail.ru
Russian Federation, St. Petersburg
A. S. Korotkov
Peter the Great St. Petersburg Polytechnic University
Email: alyabjev_au@mail.ru
Russian Federation, St. Petersburg