Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide
- Authors: Pivovarenok S.A.1, Dunaev A.V.1, Murin D.B.1
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Affiliations:
- Research Institute of Thermodynamics and Kinetics of Chemical Processes
- Issue: Vol 45, No 5 (2016)
- Pages: 345-349
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185757
- DOI: https://doi.org/10.1134/S1063739716040089
- ID: 185757
Cite item
Abstract
Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.
About the authors
S. A. Pivovarenok
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Author for correspondence.
Email: sap@isuct.ru
Russian Federation, Ivanovo, 153000
A. V. Dunaev
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Email: sap@isuct.ru
Russian Federation, Ivanovo, 153000
D. B. Murin
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Email: sap@isuct.ru
Russian Federation, Ivanovo, 153000