Email this article Multilevel Bipolar Memristor Model Considering Deviations of Switching Parameters in the Verilog-A Language
- Authors: Teplov G.S.1, Gornev E.S.1
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Affiliations:
- Molecular Electronics Research Institute (AO MERI)
- Issue: Vol 48, No 3 (2019)
- Pages: 131-142
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187117
- DOI: https://doi.org/10.1134/S1063739719030107
- ID: 187117
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Abstract
We describe a bipolar memristor in the Verilog-A language. The proposed model concepts take into account the following parameter deviations in the memristor switching between conduction states: the variation of the conduction parameters in the highly resistive and low-resistance state, the switching threshold variations, and the variation of the number of switching cycles.
About the authors
G. S. Teplov
Molecular Electronics Research Institute (AO MERI)
Author for correspondence.
Email: gteplov@niime.ru
Russian Federation, Moscow, 124460
E. S. Gornev
Molecular Electronics Research Institute (AO MERI)
Author for correspondence.
Email: egornev@niime.ru
Russian Federation, Moscow, 124460
