Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si

Abstract

The basic properties in the Schottky-barrier photodiodes (SBPDs) can be reduced to photon absorption in the silicide layer and internal photoemission of charge carriers from a metal to a semiconductor. Therefore, the quantum efficiency and photoresponse of these photodiodes (PDs) are primarily determined by electronic and optical processes in the metal silicide rather than in the semiconductor. This implies that, to a first approximation, the SBPD photoresponse is independent of semiconductor parameters such as the doping level, degree of compensation of impurities, and minority-carrier lifetime. The main reasons for photoresponse nonuniformity in multielement detector arrays are thereby ruled out.