Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals

V. M. Roshchin; V. L. Dshkhunyan; I. N. Petukhov; K. S. Sen’chenko; M. S. Vagin

doi:10.1134/S1063739716040090

Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals

Authors: Roshchin V.M.¹, Dshkhunyan V.L.², Petukhov I.N.¹, Sen’chenko K.S.¹, Vagin M.S.¹
Affiliations:
1. National Research University MIET
2. OAO Rossiiskaya Elektronika
Issue: Vol 45, No 5 (2016)
Pages: 324-328
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/185735
DOI: https://doi.org/10.1134/S1063739716040090
ID: 185735

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Abstract

Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined.