Design Automation Technique of Silicon Bandgap Voltage Reference

Abstract

A formalized technique for the automated design of bandgap voltage reference (BVR) is proposed. The distinctive feature of the technique is the automation of the synthesis of the circuit engineering conceptions by the given parameters of the source, which considerably reduces the design time. Based on the developed technique by the 180-nm SOI technology, the circuit of the voltage reference source was designed. The obtained schematic solution has the following desired characteristics: the power supply suppression ratio at the frequencies of 1 kHz in the worst case is –60 dB and at the frequencies of 1 MHz is –44 dB, the maximum consumption current is 25 μA, the temperature coefficient is 24 ppm/°C in the temperature range from –70 to 150°C, and the ratio of changing the output voltage to changing the supply voltage is 354 μV/V in the range of supply voltage from 2.4 to 7 V.