Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs

A. I. Chumakov; D. V. Bobrovsky; A. A. Pechenkin; D. V. Savchenkov; G. S. Sorokoumov; I. I. Shvetsov-Shilovskiy

doi:10.1134/S1063739719040036

Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs

Authors: Chumakov A.I.¹, Bobrovsky D.V.¹, Pechenkin A.A.¹, Savchenkov D.V.¹, Sorokoumov G.S.¹, Shvetsov-Shilovskiy I.I.¹
Affiliations:
1. National Research Nuclear University MEPhI, Joint Stock Company “Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)
Issue: Vol 48, No 4 (2019)
Pages: 250-254
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/187152
DOI: https://doi.org/10.1134/S1063739719040036
ID: 187152

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Abstract

The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.