Study of transient processes in a  p-i-n  photodetector using the nonstationary physical-topological model

E. A. Ryndin; I. V. Pisarenko

doi:10.1134/S1063739717030064

Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model

Authors: Ryndin E.A.¹, Pisarenko I.V.¹
Affiliations:
1. Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering
Issue: Vol 46, No 3 (2017)
Pages: 186-191
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186344
DOI: https://doi.org/10.1134/S1063739717030064
ID: 186344

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

We developed a nonstationary diffusion-drift physico-topological model of a GaAs p-i-n photodetector for operation as an element of an optical switch integrated circuit, together with a high-speed injection laser based on a double heterostructure with a functionally integrated radiation modulator.

About the authors

E. A. Ryndin

Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering

Author for correspondence.
Email: rynenator@gmail.com
Russian Federation, Taganrog, 347928

I. V. Pisarenko