Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices
- Authors: Surin Y.V.1, Spiridonov A.B.2, Litsoev S.V.1, Martinova V.P.1, Mezhov A.V.1, Karpovskaya A.A.1
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Affiliations:
- AO NIIMP-K
- National Research University of Electronic Technology
- Issue: Vol 46, No 7 (2017)
- Pages: 484-488
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186654
- DOI: https://doi.org/10.1134/S1063739717070113
- ID: 186654
Cite item
Abstract
The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.
Keywords
About the authors
Yu. V. Surin
AO NIIMP-K
Email: sface@mail.ru
Russian Federation, Moscow
A. B. Spiridonov
National Research University of Electronic Technology
Email: sface@mail.ru
Russian Federation, Moscow
S. V. Litsoev
AO NIIMP-K
Author for correspondence.
Email: sface@mail.ru
Russian Federation, Moscow
V. P. Martinova
AO NIIMP-K
Email: sface@mail.ru
Russian Federation, Moscow
A. V. Mezhov
AO NIIMP-K
Email: sface@mail.ru
Russian Federation, Moscow
A. A. Karpovskaya
AO NIIMP-K
Email: sface@mail.ru
Russian Federation, Moscow