Vol 47, No 2 (2018)

The electrophysical parameters and radiation spectrum of BCl₃ plasma under a DC glow discharge are analyzed. Data on the gas temperature and reduced electrical field intensity are obtained. It is established that the reduced electrical field intensity in BCl₃ plasma practically does not depend on the discharge current (under a constant pressure); moreover, it appreciably decreases with an increase in the gas pressure (under a constant discharge current). It is revealed that a linear increase in the gas temperature with increasing pressure is caused by increasing the specific power expended in the discharge. The radiation spectra of BCl₃ plasma are presented by atomic and molecular components. It is established that with a growth in the current the radiation intensity increases linearly, which corresponds to the mechanism of direct excitation of radiating states under an electronic impact and it is evidence of a lack of secondary processes.

The electrophysical properties of the films of metal-containing polyacrylonitrile doped with Co, Cu, and Ag metals are investigated. The surface layers of the substrates are studied by the atomic force microscopy method. The thickness of the films of metal-containing polyacrylonitrile and the activation energy of the film conductivity are defined. It is revealed that the introduction of various doping elements with different concentrations makes it possible to obtain materials with different physical properties.

The technology to obtain a silicide Pt/Ir mixture and Pt/Ir–Si photosensitive structures with a Schottky barrier in the middle IR area is developed. It is found that the main way to detect Pt/IrSi–р–Si structures is through the photoemission of Pt/IrSi holes into silicon. Moreover, the maximal photosensitivity is observed when the Pt/IrSi is not thicker than the free path length of the holes (less than 460 Å). The energy band diagram of the Schottky barrier structures based on the Pt/IrSi–Si contact is plotted. It is determined that the electron affinity of Pt/IrSi varies within 4.7–5.26 eV depending on the operational conditions of its formation.

The TCAD simulation of charge collection from tracks of single nuclear particles directed along the normal to the logic matching element on STG DICE cells demonstrates their unique upset tolerance. The tracks used for simulation are directed normal to the microchip surface with the linear energy transfer (LET) ranging from 10 to 60 MeV cm²/mg. We investigate a 65-nm bulk CMOS logic matching element for use in content addressable memory and translation lookaside buffers. It is a matching element on an STG DICE cell with an exclusive OR logic element on two tristate inverters. The linear energy transfers in the range of 30–60 MeV cm²/mg on the tracks normal to the chip surface do not cause single event upsets in the STG DICE cell for LET = 60 MeV cm²/mg. In the output combinational logic of the matching element, short (up to 0.6 ns) noise voltage pulses for a LET ranging from 20 to 60 MeV cm²/mg can be found.