Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors

Abstract

The problems of modeling the basic electrophysical characteristics of asymmetrically doped double- gate SOI CMOS nanotransistors are discussed. A mathematical model for the distribution of the potential of the working region, which follows from the analytic solution of the 2D Poisson equation is treated. The variant of the asymmetric channel (counting from the source) with highly doped and low-doped regions is analyzed. The results of the model calculations of the potential distribution of sub-50-nm structures are in good agreement with the simulation data obtained using a commercially available ATLAS^TM software package intended for modeling 2D transistor structures. Based on the obtained potential distributions, the current–voltage performances are calculated using the model of current formulated within the charge separation concept, taking into account the modified expression for the saturation rate. For the topological norms chosen, the optimization of the parameters of an asymmetrically doped profile provides an additional opportunity to monitor the key characteristics along with the thicknesses of the working region and the gate oxide, which is important in analyzing the applicability of nanotransistor structures, in particular, for analog applications.