Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge
- Authors: Ezhovskii Y.K.1, Mikhailovskii S.V.1
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Affiliations:
- St. Petersburg State Institute of Technology (Technical University)
- Issue: Vol 48, No 4 (2019)
- Pages: 229-235
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187142
- DOI: https://doi.org/10.1134/S1063739719030041
- ID: 187142
Cite item
Abstract
The process of the formation of silicon–nitrogen nanostructures at a GaAs surface with orientation (100) and (110) by atomic layer deposition (molecular layering) is considered. The synthesis ios carried out in a vacuum unit using SiCl4 and NH3 vapors in the temperature range 423–723 K with activation of the process by a glow discharge at the ammonia pulsing stage. The conditions of the growth of silicon nitride nanostructures and the conditions of a layer mechanism of their formation are determined. It is established that, at temperatures of synthesis above 573 K, the increase in the silicon nitride layer’s thickness reaches ≈0.5 nm/cycle, which is likely to be explained by the participation of hydrazine in the process of film formation.
About the authors
Yu. K. Ezhovskii
St. Petersburg State Institute of Technology (Technical University)
Author for correspondence.
Email: ezhovski1@mail.ru
Russian Federation, St. Petersburg, 190013
S. V. Mikhailovskii
St. Petersburg State Institute of Technology (Technical University)
Email: ezhovski1@mail.ru
Russian Federation, St. Petersburg, 190013