Email this article Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
- Authors: Orlov O.M.1,2, Voronov D.D.3,2, Izmailov R.A.3,2, Krasnikov G.Y.1,2
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Affiliations:
- OAO Mikron
- AO Research Institute of Molecular Electronics
- Moscow Physical-Technical Institute (Technical University)
- Issue: Vol 46, No 5 (2017)
- Pages: 353-358
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186528
- DOI: https://doi.org/10.1134/S1063739717050067
- ID: 186528
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Abstract
The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
About the authors
O. M. Orlov
OAO Mikron; AO Research Institute of Molecular Electronics
Author for correspondence.
Email: oorlov@mikron.ru
Russian Federation, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
D. D. Voronov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Russian Federation, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
R. A. Izmailov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Russian Federation, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
G. Ya. Krasnikov
OAO Mikron; AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Russian Federation, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
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