System-on-chip: Specifics of radiation behavior and estimation of radiation hardness
- Authors: Kalashnikov O.A.1, Nekrasov P.V.1, Nikiforov A.Y.1, Telets V.A.1, Chukov G.V.1, Elesin V.V.1
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Affiliations:
- National Research Nuclear University MEPhI, ENPO SPELS
- Issue: Vol 45, No 1 (2016)
- Pages: 33-40
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185518
- DOI: https://doi.org/10.1134/S1063739716010066
- ID: 185518
Cite item
Abstract
The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.
About the authors
O. A. Kalashnikov
National Research Nuclear University MEPhI, ENPO SPELS
Author for correspondence.
Email: oakal@spels.ru
Russian Federation, Moscow
P. V. Nekrasov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
Russian Federation, Moscow
A. Yu. Nikiforov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
Russian Federation, Moscow
V. A. Telets
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
Russian Federation, Moscow
G. V. Chukov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
Russian Federation, Moscow
V. V. Elesin
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
Russian Federation, Moscow