Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems
- Authors: Kozlov A.V.1, Krasjukov A.Y.1, Krupkina T.Y.1, Chaplygin Y.A.1
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Affiliations:
- National Research University of Electronic Technology
- Issue: Vol 45, No 7 (2016)
- Pages: 522-527
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185995
- DOI: https://doi.org/10.1134/S1063739716070088
- ID: 185995
Cite item
Abstract
The features of the technology computer aided design of integrated magnetosensitive elements in micro and nanosystems are considered. The results of the simulation and optimization of the constructive and technological parameters for magnetosensitive transistors, integrated Hall elements based on the standard CMOS technology, the Hall field sensor based on SOI-structures, and the characteristics of magnetic field concentrators are presented.
About the authors
A. V. Kozlov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Russian Federation, Moscow, 124498
A. Yu. Krasjukov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Russian Federation, Moscow, 124498
T. Yu. Krupkina
National Research University of Electronic Technology
Author for correspondence.
Email: Krupkina@dsd.miee.ru
Russian Federation, Moscow, 124498
Yu. A. Chaplygin
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Russian Federation, Moscow, 124498