Electromagnetic Modeling, Technology, and Production of Microwave C 3 MOSHFET Switches on AlGaN/GaN Heterostructures

A. S. Adonin; A. Yu. Evgrafov; V. M. Minnebaev; N. G. Ivashchenko; A. V. Myakon’kikh; A. E. Rogozhin; K. V. Rudenko

doi:10.1134/S1063739717060026

Electromagnetic Modeling, Technology, and Production of Microwave C³MOSHFET Switches on AlGaN/GaN Heterostructures

Authors: Adonin A.S.¹, Evgrafov A.Y.¹, Minnebaev V.M.¹, Ivashchenko N.G.¹, Myakon’kikh A.V.², Rogozhin A.E.², Rudenko K.V.²
Affiliations:
1. AO Scientific and Production Enterprise NPP Pulsar
2. Physics and Technological Institute
Issue: Vol 46, No 6 (2017)
Pages: 390-395
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186560
DOI: https://doi.org/10.1134/S1063739717060026
ID: 186560

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Abstract

The features of the electromagnetic modeling of a microwave switch for the frequency range of 1–20 GHz, which is then produced by C³MOSHFET technology on AlGaN/GaN heterostructures using high-K dielectrics and contacts with capacitive coupling, are considered.