Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

A. S. Benediktov; N. A. Shelepin; P. V. Ignatov; A. A. Mikhailov; A. G. Potupchik

doi:10.1134/S1063739718030022

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

Authors: Benediktov A.S.¹, Shelepin N.A.¹, Ignatov P.V.¹, Mikhailov A.A.¹, Potupchik A.G.¹
Affiliations:
1. Molecular Electronics Research Institute (MERI)
Issue: Vol 47, No 3 (2018)
Pages: 197-200
Section: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186831
DOI: https://doi.org/10.1134/S1063739718030022
ID: 186831

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Abstract

The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.