Email this article A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode
- Authors: Grigoriev F.I.1, Aleksandrova A.B.1, Gafurov V.A.2
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Affiliations:
- Moscow Institute of Electronics and Mathematics
- Dukhov All-Russian Research Institute of Automatics
- Issue: Vol 45, No 7 (2016)
- Pages: 469-473
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185879
- DOI: https://doi.org/10.1134/S1063739716070064
- ID: 185879
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Abstract
The dependence of the thermal characteristics of TVS-diodes during the passage of the pulse overload has been studied. The time dependences of the pulse voltage limitation and current are analyzed. Based on the analysis of the dependences, the thermal characteristics of the TVS-diode are calculated. It is shown that the parameters of the TVS-diodes deteriorate on reaching a current density of 160–300 A/cm2 and critical temperature of 250–300°С. The dependences of the thermal resistance and critical temperature of the TVS-diodes on the current density and the pulse duration are presented.
About the authors
F. I. Grigoriev
Moscow Institute of Electronics and Mathematics
Email: frog_x@mail.ru
Russian Federation, Moscow, 115054
A. B. Aleksandrova
Moscow Institute of Electronics and Mathematics
Author for correspondence.
Email: frog_x@mail.ru
Russian Federation, Moscow, 115054
V. A. Gafurov
Dukhov All-Russian Research Institute of Automatics
Email: frog_x@mail.ru
Russian Federation, Moscow, 101000
