Email this article Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma
- Authors: Pivovarenok S.A.1
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Affiliations:
- Ivanovo State University of Chemistry and Technology
- Issue: Vol 46, No 3 (2017)
- Pages: 211-215
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186382
- DOI: https://doi.org/10.1134/S106373971702007X
- ID: 186382
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Abstract
The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF2Cl2 plasma has been analyzed. It is shown that dilution of the CF2Cl2 with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to
About the authors
S. A. Pivovarenok
Ivanovo State University of Chemistry and Technology
Author for correspondence.
Email: sap@isuct.ru
Russian Federation, Ivanovo, 153000
