Features of the Current Flow in Injection Structures Based on PbSnTe:In Films
- Authors: Ishchenko D.V.1, Neizvestnyi I.G.1, Pashchin N.S.1, Sherstyakova V.N.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 47, No 4 (2018)
- Pages: 221-225
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186846
- DOI: https://doi.org/10.1134/S1063739718040042
- ID: 186846
Cite item
Abstract
This paper reports a study of the current–voltage (I–V) features of the p-i-p structures based on Pb1–xSnxTe:In films with the tin content х ≈ 0.31 in which the metal–insulator transition occurs. It is shown that the photocurrent is the hole current under light interband excitation, and electron trapping is dominant. The experimental and theoretical data are compared.
About the authors
D. V. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. G. Neizvestnyi
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
N. S. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. N. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090