Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps
- Authors: Ryabtsev I.I.1,2, Beterov I.I.1,2, Yakshina E.A.1,2, Tretyakov D.B.1,2, Entin V.M.1,2, Neizvestny I.G.1,2, Latyshev A.V.1,2, Aseev A.L.1,2
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Issue: Vol 46, No 2 (2017)
- Pages: 109-120
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186269
- DOI: https://doi.org/10.1134/S1063739717020081
- ID: 186269
Cite item
Abstract
A brief overview of the current state of the experimental research on the development of the element base of quantum computers with qubits based on single neutral atoms trapped in optical traps. The requirements for qubits, peculiarities of single neutral atoms as qubits, methods for the quantum register development and for the implementation of single-qubit quantum logic operations in the laser and microwave fields, and two-qubit operations through the dipole–dipole interaction after a short laser excitation of atoms to the Rydberg states are discussed. The results of the experiments on the observation of the interaction of two Rydberg atoms at a Förster resonance controlled by the dc and radio-frequency electric field are presented.
About the authors
I. I. Ryabtsev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Author for correspondence.
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
I. I. Beterov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
E. A. Yakshina
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
D. B. Tretyakov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. M. Entin
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. L. Aseev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090