Vol 46, No 4 (2017)

The review gives an idea about a special class of solid-state high-technology external field sensors based on diamond microstructures with optically active defects. Several types of such devices, including magnetometers, electrometers, and thermometers, are considered, which represent quantum chips containing a sensitive element (diamond structure), control and measurement units (laser, microwave signal source, and detector), and an interface of the interaction between them. The functional characteristics of the sensors determining the sphere of their application are described.

In this paper, using the kinetic method, we calculate the conductivity of a thin semiconductor layer in an alternating electric field taking into account the different specular reflection coefficients of its surfaces. No constraints are imposed on the relation between the free path length of the electrons (holes) and the thickness of the layer. The dependences are analyzed of the modulus and the argument of the dimensionless conductivity on the dimensionless thickness of the layer, the dimensionless frequency of the external electric field, and specular reflection coefficient of one of its surfaces. The results are compared with the theoretical calculations and the experimental data for a metal film.

The effect of the mixture was analyzed on the electrophysical parameters and emission spectra of CF₂Cl₂/Ar and CF₂Cl₂/He plasma. Data on the gas temperature and reduced electric field intensity are obtained. Based on the analysis of the plasma emission spectra, it is suggested that the dilution of CF₂Cl₂ with argon or helium, even in a 1-to-1 ratio, does not cause significant changes in the concentration of Cl atoms.

A technique is described for the local indium doping of epitaxial films of a p-type PbSnTe solid solution to obtain a metal-insulator transition at liquid-helium temperatures. The indium was diffused from the surface of the film, from an In layer several nanometers thick, whereas the shape and size of the doped layer were set by a mask. It is emphasized that the oxide layer should be removed before indium deposition, and that the thickness of the deposited indium layer should be precisely chosen based on the thickness of the PbSnTe film. The results of using this technique for films having different compositions and the results of measurements performed on a planar p-i-p structure are considered.

A methodical approach for the identification of a plant and characterization of integrated circuit technology based on an analysis of the features of a radiation response is proposed.