Modeling SiO2 leakage currents caused by electrical overloads


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详细

A two-component model for the formation of leakage currents in SiO2 in a strong electric field is proposed. In the model, agreement is found between the theoretical and experimental values of leakage currents in a wide range of electric field strength and the size of charge transferred.

作者简介

V. Polunin

National Research Nuclear University MEPhI; AO Experimental Research and Production Association of Specialized Electronic Systems

编辑信件的主要联系方式.
Email: vapln@spels.ru
俄罗斯联邦, Moscow, 115409; Moscow, 115409

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