Modeling SiO2 leakage currents caused by electrical overloads
- 作者: Polunin V.A.1,2
-
隶属关系:
- National Research Nuclear University MEPhI
- AO Experimental Research and Production Association of Specialized Electronic Systems
- 期: 卷 46, 编号 5 (2017)
- 页面: 359-364
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186536
- DOI: https://doi.org/10.1134/S1063739717050080
- ID: 186536
如何引用文章
详细
A two-component model for the formation of leakage currents in SiO2 in a strong electric field is proposed. In the model, agreement is found between the theoretical and experimental values of leakage currents in a wide range of electric field strength and the size of charge transferred.
作者简介
V. Polunin
National Research Nuclear University MEPhI; AO Experimental Research and Production Association of Specialized Electronic Systems
编辑信件的主要联系方式.
Email: vapln@spels.ru
俄罗斯联邦, Moscow, 115409; Moscow, 115409
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