Investigation of textured aluminum nitride films prepared by chemical vapor deposition
- Authors: Red’kin A.N.1, Ryzhova M.V.1, Yakimov E.E.1, Roshchupkin D.V.1
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Affiliations:
- Institute of Microelectronics Technology and High-Purity Materials
- Issue: Vol 46, No 1 (2017)
- Pages: 26-29
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186204
- DOI: https://doi.org/10.1134/S1063739717010085
- ID: 186204
Cite item
Abstract
Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.
About the authors
A. N. Red’kin
Institute of Microelectronics Technology and High-Purity Materials
Author for correspondence.
Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432
M. V. Ryzhova
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432
E. E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432
D. V. Roshchupkin
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432
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