Investigation of textured aluminum nitride films prepared by chemical vapor deposition


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Abstract

Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.

About the authors

A. N. Red’kin

Institute of Microelectronics Technology and High-Purity Materials

Author for correspondence.
Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432

M. V. Ryzhova

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432

E. E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432

D. V. Roshchupkin

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
Russian Federation, Chernogolovka, Moscow region, 142432

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