The Standard Model of the Heterostructure for Microwave Devices

Abstract

A methodology of the selection of the initial materials, architecture and synthesis of heterostructures based on domestic materials and technologies as applied to specific types of microwave components needs to be developed. As the nomenclature expands, the requirements on energy consumption, overall dimensions and weight, frequency range, noise, values of working temperatures, and other characteristics of microwave components have significantly increased. Specific examples of power amplifiers for various applications (wireless communication systems and location systems) are considered. It is shown that in order to implement such developments, it is necessary to apply modern methods of multilevel computer modeling using various methods of optimization and widely use the tested technical solutions. The final result of this development is the creation of a set of basic physical models of the heterostructures, including those based on the solution of optimized problems by choosing the initial material, substrate material, layer composition, their sequences, layer thicknesses, impurity contents, and their distribution by the layer thickness. All this makes it possible to form an acceptable level of mechanical stresses and high values of the electrophysical characteristics in the heterostructure. The initial data set in the form of a library of basic models of the heterostructures will make it possible to significantly accelerate the development of various microwave components and optoelectronic components in the system of instrument and technological design and improve the characteristics of the devices and economic rates.