Etching of SiC in Low Power Inductively-Coupled Plasma
- Authors: Osipov A.A.1, Aleksandrov S.E.1, Solov’ev Y.V.1, Uvarov A.A.2, Osipov A.A.3
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Affiliations:
- Peter the Great St. Petersburg Polytechnical University
- CORIAL
- Institute of Mineralogy, Urals Branch, Russian Academy of Sciences
- Issue: Vol 47, No 6 (2018)
- Pages: 427-433
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186932
- DOI: https://doi.org/10.1134/S1063739719010074
- ID: 186932
Cite item
Abstract
The peculiarities of etching 4H silicon carbide (4H-SiC) in F-containing inductively-coupled plasma at lowered values of power absorbed in an RF discharge are considered. The application of the initial SF6/O2 mixture yielded the most promising results in order to achieve a defect-free morphology of the etching surface of SiC. The influence of bias voltage applied to the substrate holder on the etching rate is identified. The maximum rate of etching in our experiments was 840 nm/min. It is shown that the additional treatment of SiC surface in Ar plasma positively affects the morphology of the etching surface, minimizing the surface density of various defects.
About the authors
A. A. Osipov
Peter the Great St. Petersburg Polytechnical University
Author for correspondence.
Email: tema.osipov@mail.ru
Russian Federation, St. Petersburg, 195251
S. E. Aleksandrov
Peter the Great St. Petersburg Polytechnical University
Email: tema.osipov@mail.ru
Russian Federation, St. Petersburg, 195251
Yu. V. Solov’ev
Peter the Great St. Petersburg Polytechnical University
Email: tema.osipov@mail.ru
Russian Federation, St. Petersburg, 195251
A. A. Uvarov
CORIAL
Email: tema.osipov@mail.ru
France, Bernin, 38190
A. A. Osipov
Institute of Mineralogy, Urals Branch, Russian Academy of Sciences
Email: tema.osipov@mail.ru
Russian Federation, Miass, 456317