Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
- Authors: Pavlov A.Y.1, Pavlov V.Y.1, Slapovskiy D.N.1, Arutyunyan S.S.1, Fedorov Y.V.1, Mal’tsev P.P.1
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Affiliations:
- Institute of Microwave Semiconductor Electronics
- Issue: Vol 46, No 5 (2017)
- Pages: 316-322
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186500
- DOI: https://doi.org/10.1134/S1063739717050079
- ID: 186500
Cite item
Abstract
A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact metallization by molecular beam epitaxy through a preliminarily formed dielectric mask. The fabricated field-effect transistor with a gate length of 0.18 µm and a total width of 100 µm has a current–amplification cutoff frequency of 66 GHz and ohmic contact resistivity of 0.15-0.18 Ω mm.
About the authors
A. Yu. Pavlov
Institute of Microwave Semiconductor Electronics
Author for correspondence.
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105
V. Yu. Pavlov
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105
D. N. Slapovskiy
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105
S. S. Arutyunyan
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105
Yu. V. Fedorov
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105
P. P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Russian Federation, Moscow, 117105