Email this article The detection limit of curved InGaAs/AlGaAs/GaAs hall bars
- Authors: Chesnitskiy A.V.1, Mikhantiev E.A.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Issue: Vol 45, No 2 (2016)
- Pages: 105-111
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185563
- DOI: https://doi.org/10.1134/S1063739716020025
- ID: 185563
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Abstract
The work is devoted to the study of noise characteristics of curved Hall bars based on InGaAs/AlGaAs/GaAs semiconductor heterostructures. The noise spectral density SN(f) was investigated experimentally and the magnetic field detection limit BN of a flat and similar Hall bar rolled in a tube was defined. The low-frequency spectra of 1/f noise were studied and the dimensionless Hooge noise parameter αH was determined. The ability to use the curved Hall bars in the devices for measuring weak magnetic fields (<1 μT) was predicted.
About the authors
A. V. Chesnitskiy
Rzhanov Institute of Semiconductor Physics
Author for correspondence.
Email: chesnitskiy@isp.nsc.ru
Russian Federation, pr. Ak. Lavrent’eva 13, Novosibirsk, 630090
E. A. Mikhantiev
Rzhanov Institute of Semiconductor Physics
Email: chesnitskiy@isp.nsc.ru
Russian Federation, pr. Ak. Lavrent’eva 13, Novosibirsk, 630090
