Email this article Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
- Authors: Gamkrelidze S.A.1, Trofimov A.A.1, Shchavruk N.V.1
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Affiliations:
- Institute of Ultra-High Frequency Semiconductor Electronics
- Issue: Vol 46, No 5 (2017)
- Pages: 323-328
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186504
- DOI: https://doi.org/10.1134/S1063739717050031
- ID: 186504
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Abstract
This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.
About the authors
S. A. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Russian Federation, Moscow, 117105
A. A. Trofimov
Institute of Ultra-High Frequency Semiconductor Electronics
Author for correspondence.
Email: aa-trofimov@yandex.ru
Russian Federation, Moscow, 117105
N. V. Shchavruk
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Russian Federation, Moscow, 117105
