Field Emission Properties of Nanostructured Silicon Cathode Arrays
- Authors: Yafarov R.K.1, Suzdaltsev S.Y.1, Shanygin V.Y.1
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Affiliations:
- Kotelnikov Institute of Radioengineering and Electronics (IRE), Russian Academy of Sciences
- Issue: Vol 47, No 2 (2018)
- Pages: 104-111
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186795
- DOI: https://doi.org/10.1134/S1063739718020099
- ID: 186795
Cite item
Abstract
The fabrication method of field electron sources using the atomic structure of silicon crystals and the processes of heterophase vacuum-plasma self-organization of island carbon coatings and highly anisotropic plasma-chemical etching under low adsorption is theoretically justified and experimentally implemented. The interrelation of the morphological and field emission characteristics of fabricated field emission cathodic microstructures is established. The experimental results are interpreted using the Fowler-Nordheim representation in connection with the changes of the surface phases of multipoint silicon microstructures.
About the authors
R. K. Yafarov
Kotelnikov Institute of Radioengineering and Electronics (IRE), Russian Academy of Sciences
Author for correspondence.
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019
S. Yu. Suzdaltsev
Kotelnikov Institute of Radioengineering and Electronics (IRE), Russian Academy of Sciences
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019
V. Ya. Shanygin
Kotelnikov Institute of Radioengineering and Electronics (IRE), Russian Academy of Sciences
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019