Email this article Formation of Dielectric Nanolayers of Aluminum and Silicon Oxides on AIIIBV Semiconductors
- Authors: Ezhovskii Y.K.1
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Affiliations:
- St. Petersburg State Institute of Technology (Technical University)
- Issue: Vol 48, No 2 (2019)
- Pages: 80-84
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187095
- DOI: https://doi.org/10.1134/S1063739719020033
- ID: 187095
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Abstract
The results of investigations of the synthesis of silicon and aluminum oxide nanolayers on the GaAs, InAs, and InSb binary semiconductor surface by molecular layering (atomic layer deposition) are generalized. The conditions for the layer-by-layer growth of the surface nanostructures are established and some of their dielectric characteristics are estimated.
About the authors
Yu. K. Ezhovskii
St. Petersburg State Institute of Technology (Technical University)
Author for correspondence.
Email: ezhovski1@mail.ru
Russian Federation, St. Petersburg, 190013
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