Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences


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This paper analyzes some features of the process and device simulation tools. The tools are analyzed as applied to the calculation of electrical characteristics for several integrated circuit (IC) devices operating under different external conditions. The model features having the maximum effect on the simulation results are identified.

作者简介

Y. Chaplygin

National Research University of Electronic Technology

Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow

T. Krupkina

National Research University of Electronic Technology

Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow

A. Krasukov

National Research University of Electronic Technology

编辑信件的主要联系方式.
Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow

E. Artamonova

National Research University of Electronic Technology

Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow

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