Email this article Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences
- Authors: Chaplygin Y.A.1, Krupkina T.Y.1, Krasukov A.Y.1, Artamonova E.A.1
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Affiliations:
- National Research University of Electronic Technology
- Issue: Vol 46, No 7 (2017)
- Pages: 474-477
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186639
- DOI: https://doi.org/10.1134/S1063739717070046
- ID: 186639
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Abstract
This paper analyzes some features of the process and device simulation tools. The tools are analyzed as applied to the calculation of electrical characteristics for several integrated circuit (IC) devices operating under different external conditions. The model features having the maximum effect on the simulation results are identified.
About the authors
Y. A. Chaplygin
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Russian Federation, Moscow
T. Y. Krupkina
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Russian Federation, Moscow
A. Y. Krasukov
National Research University of Electronic Technology
Author for correspondence.
Email: a_kras@org.miet.ru
Russian Federation, Moscow
E. A. Artamonova
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
Russian Federation, Moscow
