Device-Technological Modeling of Integrated Circuit Elements with Improved Resilience to External Influences
- 作者: Chaplygin Y.A.1, Krupkina T.Y.1, Krasukov A.Y.1, Artamonova E.A.1
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隶属关系:
- National Research University of Electronic Technology
- 期: 卷 46, 编号 7 (2017)
- 页面: 474-477
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186639
- DOI: https://doi.org/10.1134/S1063739717070046
- ID: 186639
如何引用文章
详细
This paper analyzes some features of the process and device simulation tools. The tools are analyzed as applied to the calculation of electrical characteristics for several integrated circuit (IC) devices operating under different external conditions. The model features having the maximum effect on the simulation results are identified.
作者简介
Y. Chaplygin
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow
T. Krupkina
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow
A. Krasukov
National Research University of Electronic Technology
编辑信件的主要联系方式.
Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow
E. Artamonova
National Research University of Electronic Technology
Email: a_kras@org.miet.ru
俄罗斯联邦, Moscow
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