Email this article Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure
- Authors: Fedorov Y.V.1, Gnatyuk D.L.1, Zuev A.V.1, Maitama M.V.1
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Affiliations:
- Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
- Issue: Vol 46, No 6 (2017)
- Pages: 404-407
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186571
- DOI: https://doi.org/10.1134/S106373971706004X
- ID: 186571
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Abstract
The results of designing low-noise broadband amplifiers on an AlGaN/AlN/GaN HEMT heterostructure are presented. In the investigations, two variants of low-noise amplifiers executed in a two-cascade circuit are considered and fabricated. The parameters of the fabricated monolithic integrated circuits of lownoise amplifiers are given.
About the authors
Yu. V. Fedorov
Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
Author for correspondence.
Email: iuhfseras2010@yandex.ru
Russian Federation, Moscow, 117105
D. L. Gnatyuk
Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
Email: iuhfseras2010@yandex.ru
Russian Federation, Moscow, 117105
A. V. Zuev
Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
Email: iuhfseras2010@yandex.ru
Russian Federation, Moscow, 117105
M. V. Maitama
Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
Email: iuhfseras2010@yandex.ru
Russian Federation, Moscow, 117105
