Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer
- Authors: Aleshin A.N.1, Zenchenko N.V.1, Ponomarev D.S.1, Ruban O.A.1
-
Affiliations:
- Institute of Ultra-High Frequency Semiconductor Electronics
- Issue: Vol 47, No 2 (2018)
- Pages: 137-141
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186809
- DOI: https://doi.org/10.1134/S1063739718020038
- ID: 186809
Cite item
Abstract
This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us to correctly determine the operating frequency of the transistor, taking into account the effect of charged dislocation lines in the barrier layer of the heterostructure. The operating frequency values obtained with this modified model are in good agreement with the measured values.
About the authors
A. N. Aleshin
Institute of Ultra-High Frequency Semiconductor Electronics
Author for correspondence.
Email: myx.05@mail.ru
Russian Federation, Moscow
N. V. Zenchenko
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Russian Federation, Moscow
D. S. Ponomarev
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Russian Federation, Moscow
O. A. Ruban
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Russian Federation, Moscow