Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors
- Authors: Hrapov M.O.1, Gridchin V.A.1, Kalinin S.V.1
-
Affiliations:
- Novosibirsk State Technical University
- Issue: Vol 46, No 7 (2017)
- Pages: 478-483
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186646
- DOI: https://doi.org/10.1134/S1063739717070058
- ID: 186646
Cite item
Abstract
The features of modern complementary bipolar technologies (CB-technologies) for analog applications have been analyzed and the main trends in their development are considered. Different industrial CBtechnologies are compared on the basis of two parameters of complementarity, namely the quality factor (βVA) and Johnson’s parameter (BVCEOfT). The p-epitaxial-planar CB-technology has been studied by the method of two-dimensional numerical simulation using the TCAD Sentaurus software for vertical n–p–n and p–n–p transistors. A careful calibration of the parameters of technological and electrophysical 2D models on the basis of test structures has shown sufficient accuracy of the used methodology for practice.
About the authors
M. O. Hrapov
Novosibirsk State Technical University
Email: kalinin55@yandex.ru
Russian Federation, Novosibirsk
V. A. Gridchin
Novosibirsk State Technical University
Email: kalinin55@yandex.ru
Russian Federation, Novosibirsk
S. V. Kalinin
Novosibirsk State Technical University
Author for correspondence.
Email: kalinin55@yandex.ru
Russian Federation, Novosibirsk