Formation of silver and zinc selenide relief patterns by the lift-off photolithography method
- Authors: Lysich D.V.1,2, Zelentsov S.V.1, Kotomina V.E.3, Antonov I.N.3
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Affiliations:
- Chemical Faculty
- Alekseev Nizhny Novgorod State Technical University
- Nizhny Novgorod Physical-Technical Institute
- Issue: Vol 45, No 3 (2016)
- Pages: 191-195
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185626
- DOI: https://doi.org/10.1134/S1063739716030069
- ID: 185626
Cite item
Abstract
Conducting the lift-off photolithography on silicon wafers with thicknesses of the FP-383 photoresist layers varying from 1.60 ± 0.20 to 4.20 ± 0.20 μm is considered. As a lift-off layer, either a silver layer or zinc selenide layer with a thickness of 80–90 nm was deposited. The edge roughness of the image elements after the lift-off is 5.00 ± 0.20 μm.
Keywords
About the authors
D. V. Lysich
Chemical Faculty; Alekseev Nizhny Novgorod State Technical University
Author for correspondence.
Email: ldv892551@mail.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod
S. V. Zelentsov
Chemical Faculty
Email: ldv892551@mail.ru
Russian Federation, Nizhny Novgorod
V. E. Kotomina
Nizhny Novgorod Physical-Technical Institute
Email: ldv892551@mail.ru
Russian Federation, Nizhny Novgorod
I. N. Antonov
Nizhny Novgorod Physical-Technical Institute
Email: ldv892551@mail.ru
Russian Federation, Nizhny Novgorod