Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method

Abstract

The theory-based mode allowing control of the impurity concentration in the near-surface layers of the films of dielectric oxides grown by the method of atomic layer deposition (ALD) from metalorganic precursors is discussed. It is shown by simulation that, in the near-surface dielectric layer of ~20 monolayers in thickness, the concentration of impurity carbon can be reduce by up to a factor of 5, to the level of values of the per-unit-volume concentration of this impurity. We propose carrying out the growth processes of films with the modification of the parameters of the ALD cycle that should lead to an improvement of the dielectric parameters on the interfaces of multilayered structures.