Nanoscaled Profiling of Silicon Surface via Local Anodic Oxidation
- Authors: Polyakova V.V.1, Kots I.N.1, Smirnov V.A.1, Ageev O.A.2
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Affiliations:
- Department of Nanotechnology and Microsystem Engineering, Institute of Nanotechnologies, Electronics and Instrumentation, Southern Federal University
- Research Center Nanotechnology, Southern Federal University
- Issue: Vol 48, No 2 (2019)
- Pages: 66-71
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187088
- DOI: https://doi.org/10.1134/S1063739719020082
- ID: 187088
Cite item
Abstract
The nanoscaled profiling of a silicon 5 (111) n-type substrate surface is studied by the local anodic oxidation (LAO). Varying the voltage pulse amplitude from 5 to 12.5 V and the humidity from 30 ± 1 to 70 ± 1% during the LAO is a promising way to form oxide structures with heights from 0.5 ± 0.3 to 2.1 ± 0.1 nm and profiled structures with depths from 0.4 ± 0.3 to 1.5 ± 0.2 nm on the substrate. The results can be applied to the development of technological processes of the element base of silicon-based nanoelectronics using the probe nanotechnologies.
About the authors
V. V. Polyakova
Department of Nanotechnology and Microsystem Engineering, Institute of Nanotechnologies, Electronics and Instrumentation, Southern Federal University
Author for correspondence.
Email: vpolyakova@sfedu.ru
Russian Federation, Taganrog, 347922
I. N. Kots
Department of Nanotechnology and Microsystem Engineering, Institute of Nanotechnologies, Electronics and Instrumentation, Southern Federal University
Email: vpolyakova@sfedu.ru
Russian Federation, Taganrog, 347922
V. A. Smirnov
Department of Nanotechnology and Microsystem Engineering, Institute of Nanotechnologies, Electronics and Instrumentation, Southern Federal University
Email: vpolyakova@sfedu.ru
Russian Federation, Taganrog, 347922
O. A. Ageev
Research Center Nanotechnology, Southern Federal University
Email: vpolyakova@sfedu.ru
Russian Federation, Taganrog, 347928